Characteristic differences between 1200V IGBT3 modules of E3 and T3 series

Application Note
Seite 1
Datum: 2005-04-27
AN Nummer: AN2005-02
Characteristic differences between
1200V IGBT3 modules of the
E3 and T3 series
1. Chip Technology IGBT 1200V
The product range of the existing 1200V IGBT modules of the third
generation (IGBT3) – E3 was expanded by a further optimization.
The result was the T3 IGBT.
The Collector-Emitter saturation voltage (VCEsat) and the turn-off losses (Eoff)
were reduced with this T3 IGBT. (Further information on the IGBT3 can be
found in the application note AN2003-03)
Figure 1.1. Total switching losses vs. Saturation voltage of all 1200V IGBT generations.
This T3 device was optimized at a higher switching frequency. The reduced
losses in combination with the higher current density have allowed for the
expansion of the product range of the IGBT3 modules.
eupec GmbH
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Author: Wilhem Rusche
Application Note
Seite 2
Datum: 2005-04-27
AN Nummer: AN2005-02
2. Output Characteristic
Figure 2.1 shows the typical output characteristic of the T3 and the E3 IGBT.
Figure 2.1 Output Characteristic (typical)
The (typical) Collector-Emitter saturation voltage (VCEsat) of both IGBT3
generations are shown with the value of VCEsat=1,7V. There are no differences
between the E3 & T3 at a junction temperature of Tvj=25°C.
The output characteristic diagram of the T3 IGBT at the max. junction
temperature Tvjop=125°C and at nominal rated current (ICnom) shows a
reduction of the Collector-Emitter saturation voltage (VCEsat) by approx.
100mV compared with the E3.
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Application Note
Seite 3
Datum: 2005-04-27
AN Nummer: AN2005-02
3. Switching Behavior
3.1. Turn-On
The typical turn-on switching behavior of both IGBT3 generations are given
in the figures 3.1.1. and 3.1.2.
VGE
IC
IGBT3 - T3
FS75R12KT3
Tvjop = 125°C
IC = 75A
VDC = 600V
Rg=Rg nom= 4,7Ω
Eon = 6,2mJ
di/dt = 3,6kA/µs
dv/dt = -2,9kV/µs
VCE
Figure 3.1.1. turn-on (typical) FS75R12KT3
VGE
IC
IGBT3 - E3
FS75R12KE3
Tvjop = 125°C
IC = 75A
VDC = 600V
Rg=Rg nom= 4,7Ω
Eon = 6,3mJ
di/dt = 2,4kA/µs
dv/dt = -2,8kV/µs
VCE
Figure 3.1.2. turn-on (typical) FS75R12KE3
The turn-on switching behavior of both chip types is comparable and shows
almost no difference.
eupec GmbH
Max-Planck-Straße
D-59581 Warstein
Tel. +49 (0) 29 02 7 64-0
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Author: Wilhem Rusche
Application Note
Seite 4
Datum: 2005-04-27
AN Nummer: AN2005-02
3.2. Turn-On Losses
The typical turn-on losses of the IGBT Module with E3 and T3 IGBTs are
given by the example of the IGBT Module FS75R12KE3 and FS75R12KT3
as a function of the collector current. Eon = f (IC) in figure 3.2.1..
Eon=f (IC) @ ( FS75R12KE3 / FS75R12KT3 )
18
VCE = 600V
Tvjop = 125°C
RG = RGnom
VGE = ± 15V
16
14
Eon [mJ]
12
10
8
6
4
FS75R12KE3_Eon
2
FS75R12KT3_Eon
0
0
40
80
IC [A]
120
160
Figure 3.2.1. turn-on losses (typical) E3 vs. T3
The typical turn-on losses of the IGBT modules with E3 and T3 IGBT show
almost no differences.
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D-59581 Warstein
Tel. +49 (0) 29 02 7 64-0
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Author: Wilhem Rusche
Application Note
Seite 5
Datum: 2005-04-27
AN Nummer: AN2005-02
3.3. Turn-off behavior
The typical turn-off behavior of both IGBT3 generations is given in the
figures 3.3.1. and 3.3.2..
VGE
IC
IGBT3 - T3
FS75R12KT3
Tvjop = 125°C
IC = 75A
VDC = 600V
Rg=Rg nom= 4,7Ω
Eoff = 8mJ
di/dt = -0,45kA/µs
dv/dt = 3,2kV/µs
VCE
Figure 3.3.1. turn-off (typical) FS75R12KT3
VGE
IC
IGBT3 - E3
FS75R12KE3
Tvjop = 125°C
IC = 75A
VDC = 600V
Rg=Rg nom= 4,7Ω
Eoff = 11mJ
di/dt = -0,39kA/µs
dv/dt = 3,1kV/µs
VCE
Figure 3.3.2. turn-off (typical) FS75R12KE3
The turn-off process of both chip generation shows for the IGBT3-E3 chip
a softer turn-off behavior.
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D-59581 Warstein
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[email protected]
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Author: Wilhem Rusche
Application Note
Seite 6
Datum: 2005-04-27
AN Nummer: AN2005-02
3.4. Total Turn-Off Losses
The total turn-off losses of the T3 IGBT could be reduced in comparison with
the E3 IGBT. In figure 3.4.1 the typical characteristic of the total turn-off
losses as a function of the collector current is given for the IGBT Modules
FS75R12KE3 and FS75R12KT3.
Eoff = f(IC) @ ( FS75R12KE3 / FS75R12KT3 )
18
VCE=600V
Tvjop=125°C
RG=RGnom
VGE=±15V
16
14
Eoff [mJ]
12
10
8
6
4
FS75R12KE3_Eoff
2
FS75R12KT3_Eoff
0
0
40
80
120
160
IC [A]
Bild 3.4.1 Abschaltverluste (typisch) E3 vs. T3
The turn-off losses of the T3 IGBT module (FS75R12KT3 Eoff=8,1mJ) under
nominal conditions are approx. 17% lower in comparison with the E3 IGBT
module (FS75R12KE3 Eoff=9,5mJ).
To optimally use the advantages of the reduced losses of the IGBT3 - T3 it is
required to reduce the stray inductances of the application, because the
IGBT3-T3 exhibits a reduced softness during turning off.
The current steepness during the turn-off process produces in combination
with the parasitic inductance of the DC link and module inductance, an over
voltage at the IGBT: ∆ V = − L * di
σ
dt
Naturally over voltages that occur at the IGBT during the turn-off process
must always be limited to the maximum reverse voltage of the module (VCES).
eupec GmbH
Max-Planck-Straße
D-59581 Warstein
Tel. +49 (0) 29 02 7 64-0
Fax + 49 (0) 29 02 7 64-12 56
[email protected]
www.eupec.com
Author: Wilhem Rusche
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