Module Adapter Board for EconoDUAL™3 IGBT Modules

Application Note, V1.0, Feb. 2010
AN2010-01
MA200E12/17_EVAL
Module Adapter Board for EconoDUAL™3
IGBT Modules
IFAG IMM INP TM
Edition 2010-02-08
Published by
Infineon Technologies AG
59568 Warstein, Germany
© Infineon Technologies AG 2010.
All Rights Reserved.
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AN2010-01
EconoDUAL 3 Module Adapter Board
AN2010-01
Revision History:
Previous Version:
Page
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V1.0
Subjects (major changes since last revision)
Authors: Alain Siani IFAG IMM INP TM, Uwe Jansen IFAG IMM INP TM
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Application Note
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1
Introduction ............................................................................................................................................ 5
2
Design features ...................................................................................................................................... 6
2.1
2.2
2.3
2.4
3
Main features....................................................................................................................................... 6
Key data............................................................................................................................................... 7
Mechanical dimensions ....................................................................................................................... 7
Pin assignment .................................................................................................................................... 8
Application Note................................................................................................................................... 10
3.1
3.2
3.3
3.4
3.5
3.6
3.7
4
Functionality on board ....................................................................................................................... 10
Gate resistors .................................................................................................................................... 10
Gate signal amplifier.......................................................................................................................... 11
VCE monitoring for short circuit detection........................................................................................... 12
Active voltage clamping – boosted version ....................................................................................... 13
Maximum switching frequency .......................................................................................................... 13
Parallel operation............................................................................................................................... 16
Schematic and Layout of MA200E12/17 ............................................................................................ 16
4.1
4.2
4.3
4.4
4.5
Schematic .......................................................................................................................................... 17
Assembly drawing ............................................................................................................................. 20
Layout ................................................................................................................................................ 21
Bill of Material - MA200E12 ............................................................................................................... 22
Bill of Material - MA200E17 ............................................................................................................... 24
5
How to order Evaluation Driver Boards ............................................................................................. 25
6
References ............................................................................................................................................ 25
Part number explanation:
MA
200
E12/17
12 or 17 – Suitable for 1200 V or 1700V EconoDual™ 3
Evaluationboard
200 – 20 A driver output current
MA – Module Adapter board
Application Note
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1
Introduction
The MA200E12/17 module adapter boards, shown in Figure 1, offer reliable connection between driver and
various IGBT EconoDual™ 3 modules. MA200E12/17 are dedicated to all EconoDual™ 3 module types
respecitvelly in 1200V and 1700V class. Used together with 2ED300E17-SFO evaluation adapter board and
2ED300C17-S /-ST EiceDRIVER™ make the ‘Flexible driver Starter Kit’ easy to use (Fig. 2). The ‘Flexible
Starter Kit’ is dedicated for easy EconoDual™ paralleling but single module operation is as well possible. In
any case one 2ED300E17-SFO adapter board and one 2ED300C17-S driver is required. Number of
MA200E12/17 is the same as paralleled modules.
The MA200E12/17 module adapter boards are available from Infineon in small quantities. Functions and min
properties of these parts are described in the datasheet chapter of this document whereas the remaining
paragraphs provide information intended to enable the customer to copy, modify and qualify the design for
production described in this application note.
The design of the MA200E12/17 was performed with respect to the environmental conditions. The
requirements for leadfree reflow soldering have been considered when components were selected. The
design was tested as described in this documentation but not qualified regarding manufacturing and
operation in the whole ambient temperature operating range or lifetime.
The boards provided by Infineon are subjected to functional testing only.
Due to their purpose evaluation boards are not subjected to the same procedures regarding Returned
Material Analysis (RMA), Process Change Notification (PCN) and Product Discontinuation (PD) as regular
products.
See Legal Disclaimer and Warnings for further restrictions on Infineon warranty and liability.
MA200E12/17 Top side
Figure 1
MA200E12/17 Bottom side
The EconoDual™3 Module Adapter board
Application Note
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EconoDUAL 3 Module Adapter Board
Figure 2
The ‘Flexible driver Starter Kit’ for EconoDual™3 module
2
Design features
Electric features of the evaluation board and mechanical dimensions including necessary interface
connections are presented in following sections. There are two different versions available MA200E12 and
MA200E17. Both use the same bare PCB, but components vary with type. If both types are refered to the
designation MA200E12/17 is used.
2.1
Main features
The MA200E12/17 module adapter board offers the following features:
•
•
•
•
•
•
•
•
Dual channel IGBT driver together with 2ED300E17-SFO (detailed description in AN2007-05)
and 2ED300C17-S /-ST EiceDRIVER™
Electrically and mechanically suitable for EconoDual™ 3 modules family
Operating temperature (design target) minimum value -40°C
Different gate resistor values for turning-on and -off are possible
IGBTs are secured against temporary VCE overvoltages during turn-off (Active Clamping)
Diodes for IGBT desaturation monitoring implemented (short circuit protection)
All components, except connectors, are surface mounted devices (SMD) with lead free 260°C
soldering profile
PCB is designed to fulfil the requirements of IEC61800-5-1, pollution degree 2, overvoltage category III
(creepage – 11 mm)
When the MA200E12/17 is not used with 2ED300E17-SFO adapter board and 2ED300C17-S /-ST
EiceDRIVER™ these following features might be useful:
• Gate-emitter amplifier input resistance is larger than 45 Ω
• Can be used with max. ±20V isolated power supply (due to IGBT short circuit performances a value of
max. +16V is suggested)
• Asymmetric power supply is also allowed e.g. -8 V and +16 V
• Input PWM voltage level should be selected according to power supply voltage level (in the same range
but not higher)
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2.2
Key data
All values given in the table below are typical values, measured at TA = 25 °C.
Table 1
General key data and characteristic values
Parameter
VDC – max. DC voltage supply
IG – max. peak output current
RGmin – minimum gate resistor value when VDC=±15V (internal module resistor
RINT + external REXT)
PDC/DC – max DC/DC output power per one channel1
fS – max. PWM signal frequency for channel A and B2
Top – operating temperature (design target) 3
Tsto – storage temperature (design target)
2.3
Mechanical dimensions
Figure 3
The MA200E12/17 mounted on EconoDual™3 module
Value
±20
±20
1.5
Unit
V
A
4
60
-40…+85
-40…+85
W
kHz
°C
°C
Ω
1
Only when MA200E12/17 used together with 2ED300E17-SFO adapter board and 2ED300C17-S EiceDRIVER™
2
Switching frequency is limited by 2ED300C17-S EiceDRIVER™ capabilities. The maximum switching frequency for every
EconoDual™ module type should be calculated separately. Limitation factors are: max. DC/DC output power of 4 W per channel and
max. PCB board temperature measured around gate resistors placed on separated board closed to IGBT module. For detailed
information see chapter 3.6.
3
Max. ambient temperature strictly depends on MA200E12/17 load conditions.
Application Note
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100 mm
max. 12mm
max. 17mm
64 mm
Figure 4
Dimensions of the MA200E12/17 module adapter board
2.4
Pin assignment
After the module adapter has been correctly mounted to the EconoDual™ module all external electrical
control signals should be applied to connector X1 and X2 as shown on Fig. 6 and listed in Table 2. When
MA200E12/17 is used together with 2ED300E17-SFO the necessary connections to module adapter are
depicted in Figure 5. In this case the Sense-Signal of the 2ED300S17-S driver is used instead of the OutSignal, making the internal booster of the 2ED300C17 redundant. The control signals required for module
driving should be connected to Input Interface of 2ED300E17-SFO as described in AN2007-05. In that way
no additional connections between module and IGBT driver are needed. The ready to use setup is shown in
Fig. 2.
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X3
X7
X9
X2
1
5
VA+
COMA
VASENSEA
VCESATA
1
5
2ED300E17-
MA200E12/17
1
VB+
COMB
VBSENSEB
VCESATB
X4
Figure 5
X8
X10
5
5
1
X1
Cable
Connections between 2ED300E17-SFO and MA200E12/17
X2
VDCA+
COMA
VDCAVGEA
VCESATA
5
1
MA200E12/17
VDCB+
COMB
VDCBVGEB
VCESATB
5
1
X1
Figure 6
MA200E12/17 Module Adapter board and external electrical connections
Table 2
MA200E12/17 and the external electrical signals description
Pin
X2.5
X2.4
X2.3
X2.2
X2.1
X1.5
X1.4
X1.3
X1.2
X1.1
Application Note
Label
VDC A+
COM A
VDC AVGE A
VCESAT A
VDC B+
COM B
VDC BVGE B
VCESAT B
Function
Insolated DC/DC positive voltage supply channel A
Auxiliary emitter – channel A
Isolated DC/DC negative voltage supply channel A
Gate-emitter signal source – channel A
Desaturation voltage monitoring output – channel A
Isolated DC/DC positive voltage supply channel B
Auxiliary emitter – channel B
Isolated DC/DC negative voltage supply channel B
Gate-emitter signal source – channel B
Desaturation voltage monitoring output – channel B
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3
Application Note
3.1
Functionality on board
The MA200E12/17 basically supports already existing IGBT driver in half-bridge configuration and provides
additional functions separately for both channels (top and bottom IGBT):
• Gate resistors
• Gate signal amplifier / emitter follower - booster
• VCE monitoring for short circuit detection
• Active voltage clamping
Picture bellow depicts the MA200E12/17 with already mentioned functions and shows their physical
location.
Booster Top IGBT
Booster Bottom
IGBT
Connectors
AC voltage diodes
Bottom IGBT
AC voltage diodes
Top IGBT
Gate resistors
Top IGBT
Gate resistors
Bottom IGBT
Figure 7
The MA200E12/17 with marked functions
3.2
Gate resistors
MA200E12/17 is assembled and delivered as shown on Fig. 7, but without gate resistors. Proper gate
resistors should be soldered by the customer. Due to variation of switching behaviour with DC-link
inductance, gate driver impedance and gate driver supply voltage no definitive values for the gate resistor
values can be provided without taking the complete test setup into consideration. For 1700 V IGBT modules,
operation together with the 2ED300E17-SFO board and a DC-link inductance of 35 nH values given in table
3 will provide approximately the same dIC/dt as during device characterization. For 1200 V IGBT modules
suitable values are to be evaluated within the individual project. The datasheet value of the gate resistor may
be used as a starting point, but lower values are permissible as long as the datasheet value of dIC/dt is not
exceeded and the module is able to switch without oszillations. The switching losses will also vary
significantly with application parameters. For more information on these topics please refer to [1] and [2].
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The layout is intended for 2010 package size (EIA). These resistors are required to have a suitable rating for
repetitive pulse power to avoid degradation.
Table 3
External gate resistor proposition for 1700V EconoDual™ 3 IGBT modules
Module
R_GB1, R_GB2,
R_GB3, R_GT1,
R_GT2, R_GT3
R_GB4, R_GB5,
R_GB6, R_GT4,
R_GT5, R_GT6
Resulting RGon
Resulting RGoff
FF150R17ME3G
20 Ω
4,7 Ω
8.2
8.2 Ω
FF225R17ME3
6.8 Ω
4.7 Ω
3.8 Ω
3.8 Ω
FF225R17ME4
2.2 Ω
2.2 Ω
1.5 Ω
1.5 Ω
FF300R17ME3
4.7 Ω
3.3 Ω
2.7 Ω
2.7 Ω
FF300R17ME4
3.3 Ω
3.3 Ω
1.1 Ω
1.1 Ω
FF450R17ME3
2.2 Ω
2.2 Ω
1.5 Ω
1.5 Ω
FF450R17ME4
3.3 Ω
2.2 Ω
1.83 Ω
1.83 Ω
If it is intended to use different values for RGon and RGoff assembly of diodes D_T1, D_T2, D_B1, D_B2 is
possible. On Figure 8 the location of these diodes is shown.
Diode mounting
Rgon ≠ Rgoff
Top IGBT
Diode mounting
for Rgon ≠ Rgoff
Bottom IGBT
Figure 8
The MA200E12/17 location of optional diodes
Deadtime has to be adjusted according to chosen modules, driver supply voltages and gate resistors. For
details refer to [3].
3.3
Gate signal amplifier
When IGBT switches -on and –off the high peak of the gate current must be delivered from a driver. Usually
there is no technical problem when one module is driven. When one IGBT driver is used for modules
connected in parallel the driver amplifier must deliver the cumulated gate current and the length of the gate
leads increases. This setup suffers from multiple drawbacks as described in [4] and [5].
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Overcoming these limitations becomes possible when the module adapter includes a dedicated gate signal
amplifier (Fig. 8, Fig. 13 and Fig. 14). MA200E12/17 has the emitter follower called booster already
implemented. Thanks to three pairs of complementary bipolar transistors connected in parallel the minimum
gain @IG=20 A is not smaller than 301. Due to the fact that every EconoDual™ has its own module adapter
the driving conditions are nearly equal to single module operation with driver directly on top of the module.
Benefits provided by booster:
•
•
Fast control of gate-emitter voltage for every EconoDual™ module
Simple module paralleling
3.4
VCE monitoring for short circuit detection
When the IGBT conducts a several times higher current than nominal the IGBT desaturates and the VCE
voltage increases (close to DC-link voltage level). This behaviour can be practically used for short circuit
detection and switching-off an IGBT. The short circuit duration time for Infineon 1200 V and 1700 V IGBT
modules must not exceed 10µs. During this time the short circuit should be detected and the IGBT switched
off without exciding VCES.
When MA200E12/17 is used together with 2ED300E17-SFO the RSSD resistors (Soft Shut Down) must be
chosen correctly in order to ensure proper short circuit protection. AN2007-05 in chapter 3.5 describes the
procedure in details.
Figure 9a shows three FF450R17ME4 EconoDual™ modules under short circuit operation where short
circuit protection on 2ED300E17-SFO was disabled and the short circuit is turned off by the control signal.
High dIC/dt during switching off creates large overvoltage spikes which are limited by active voltage
clamping. Figure 9b depicts a case where the short circuit is detected by VCEsat-protection and shows how a
properly selected RSSD slows down the collector current when the modules are turning off. These waveforms
were aquired with a value for RSSD of 1.8 kΩ.
9a
Figure 9
1
9b
Switching behaviour of three paralleled FF450R17ME4 EconoDual™ modules under short
circuit where system with 2ED300E17-SFO and MA200E17 was applied:
short circuit protection disabled - 9a and where enabled and RSSD = 1,8kΩ − 9b
Based on ZXTN2010Z and ZXTN2012Z bipolar transistors datascheets. www.zetex.com
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3.5
Active voltage clamping – boosted version
Active voltage clamping is a technique which keeps temporary VCE overvoltages bellow VCES when the IGBT
switches off. In a classic approach avalanche diodes are connected between auxiliary collector and gate of
an IGBT module. When VCE voltage exceeds the diode breakdown voltage the diode current is shared
between IGBT gate and the driver output. Due to increased gate-emitter voltage the transistor is operated in
controlled active mode and the switching off process is interrupted. The dIC/dt slows down to a value which
results with limited VCE overshoot. Avalanche diodes conduct high peak current during time periode in which
VCE overvoltage is limited.
Overvoltage protection of the MA200E12/17 is based on active clamping as described above, but the
clamping diodes are not only connected directly to the IGBTs gate but also to the input of the amplifier
located on the MA200E12/17. Therefore the major amount of current for recharging the gate is derived from
the gate driver power supply instead of via the clamping diodes. This provides more consistent clamping
voltage due to operating the clamping diodes at smaller current and furthermore enables the clamping circuit
to be designed independend from choice of external gate resistor. Finally the same circuit for 1200V and
1700V modules employing different diode types has been realized.
Active Clamping is intended as a means of overvoltage protection in case of an overcurrent and short-circuit
turn-off. If Active Clamping operates repetitively, e.g. because of extraordinary high DC-link stray inductance
or excessive DC-link voltage a significant increase in switching loss might damage the module.
3.6
Maximum switching frequency
The IGBT switching frequency is limited by the available DC/DC power and by PCB temperature. According
to theory the power losses generated in gate resistors are a function of gate charge, voltage step at the
driver output and switching frequency. The energy is dissipated mainly through the PCB and increases the
temperature around the gate resistors. When the available power of the DC/DC converter is not reached, the
limiting factor for the IGBT’s switching frequency is the absolute maximum temperature for the FR4 material.
The temperature limit is105 °C and shall not be exceeded.
Generally the power losses generated in the gate resistors can be calculated according to following
formula (1):
Pdis = P ( REXT ) + P( RINT ) = ∆Vout ⋅ f s ⋅ QG
(1)
where:
Pdis – dissipated power, ∆Vout – voltage step at the driver output
fs – switching frequency, QG – IGBT gate charge (for the given gate voltage range)
The losses are shared between the internal – P(RINT) and the external - P(REXT) gate resistors. Due to the
PCB temperature criteria maximum switching frequency for a given ambient and baseplate temperature can
be calculated using P(REXT) and thermal resistance.
Based on experimentally determined board temperature dependencies TPCB ~ P(REXT) (Fig. 10) it is possible
to determine the maximum switching frequency for various modules.
As can be concluded from Figure 10, the board can dissipate approximately 1.5 W per channel from the
external gate resistors soldered to PCB when Ta=25 °C and Tbaseplate=125 °C. This value is relatively small
compared to 4W available driver power1. Based on this assumption the Table 4 shows maximum switching
frequencies for MA200E12/17 and EconoDual™ modules. It has to be clearly pointed out that these
maximum switching frequencies will differ when ambient and module baseplate temperatures are changed.
1
When MA300Exx used together with 2ED300E17-SFO
Application Note
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Please note also, that for these calculations datasheet value of external gate resistor has been used instead
of proposed value from table 3.
Board Temperature vs External Gate Resistor Losses @ Tbaseplate=125°C
110
105
Max. boardtemperatur
105°C (FR4)
100
95
90
T [°C] 85
Board
Temp
80
75
70
65
60
0
0,2
0,4
0,6
0,8
PRg_ext [W]
1
1,2
1,4
1,6
1,8
1,5 W
Figure 10
PCB temperature vs gate resistor power losses
Table 4
Calculated max. IGBT switching frequencies for 2ED300E17-SFO with MA200E12/17
and single EconoDualTM module
Module
REXT/Ω
RINT/Ω
fS@Ta=25°C and Tbaseplate=125°C
limited by RG power
limited by DC/DC power
FF150R17ME3G
9.1
3.2
33 kHz
65 kHz
FF225R17ME3
6.2
2.8
25 kHz
47 kHz
FF225R17ME4
3.3
2.8
32 kHz
47 kHz
FF300R17ME3
4.7
2.5
18 kHz
32 kHz
FF300R17ME4
3.3
2.5
24 kHz
36 kHz
FF450R17ME3
3.3
1,7
12 kHz
21 kHz
FF450R17ME4
3.3
1.7
13 kHz
24 kHz
In order to calculate allowed power losses P(REXT) when baseplate and ambient temperatures differ from the
example shown abow the formula (2) can be used.
P (REXT )
=
W
(105°C − Tbaseplate )
Application Note
K
56
W
K
K
(105°C − Tambient )
°C +
°C
K
43
W
14
(2)
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Finally, the suggested IGBT maximum switching frequency for given Tbaseplate and Tambient for MA200E12/17
used together with 2ED300E17-SFO is given by formula (3), when ∆Vout = 30V
fs P ( REXT ) ⋅ ( RINT + REXT )
=
30 ⋅ k ⋅ REXT ⋅ Qq
Hz
µC
(3)
where k=1.2 – tolerance factor
When modules are in parallel the driving power increases accordingly to number of paralleled modules and
their switching frequency. The maximum switching frequency in this case is determined not only by PCB
temperature but also by available driving power (4W when used with 2ED300E17-SFO). Table 5 shows
switching frequencies where two modules are in parallel and Table 6 when three are in parallel. Both
limitation factors are considered
Table 5
Calculated max. IGBT switching frequencies for 2ED300E17-SFO with MA200E12/17
and two EconoDualTM modules in parallel
Module
REXT/Ω
RINT/Ω
fS@Ta=25°C and Tbaseplate=125°C
limited by RG power
limited by DC/DC power
FF150R17ME3G
9.1
3.2
33 kHz
32 kHz
FF225R17ME3
6.2
2.8
25 kHz
23 kHz
FF225R17ME4
3.3
2.8
32 kHz
23 kHz
FF300R17ME3
4.7
2.5
19 kHz
16 kHz
FF300R17ME4
3.3
2.5
24 kHz
18 kHz
FF450R17ME3
3.3
1.7
12 kHz
10 kHz
FF450R17ME4
3.3
1.7
13 kHz
12 kHz
Table 6
Calculated max. IGBT switching frequencies for 2ED300E17-SFO with MA200E12/17
and three EconoDualTM modules in parallel
Module
REXT/Ω
RINT/Ω
fS@Ta=25°C and Tbaseplate=125°C
limited by RG power
limited by DC/DC power
FF150R17ME3G
9.1
3.2
33 kHz
21 kHz
FF225R17ME3
6.2
2.8
25 kHz
15 kHz
FF225R17ME4
3.3
2.8
32 kHz
15 kHz
FF300R17ME3
4.7
2.5
19 kHz
10 kHz
FF300R17ME4
3.3
2.5
24 kHz
12 kHz
FF450R17ME3
3.3
1.7
12 kHz
7 kHz
FF450R17ME4
3.3
1.7
13 kHz
8 kHz
Application Note
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3.7
Parallel operation
The Flexible Starter Kit consisting of one 2ED300E17-SFO, one 2ED300E17-S /-STdriver board and
MA200E12/17 module adapter board can be used for driving one EconoDual™ module as shown in Fig. 2.
The driver system can be easily adapted for paralleling of modules (maximum three EconoDual™ modules).
In that case all EconoDual™ modules should have dedicated MA200E12/17 board connected to
2ED300E17-SFO adapter board as shown in Figure 12. It must be noticed that RSSD resistor in every case
should be selected accordingly to AN2007-05 chapter 3.5.
Module 1
MA200E12/1
Connector
Module 2
2ED300E17-
Connector
Connector
MA200E12/1
Module 3
MA200E12/1
Figure 11
Connections between MA200E12/17 and 2ED300E17-SFO when three EconoDual™
modules are used in parallel
4
Schematic and Layout of MA200E12/17
To meet the individual customer requirement and make the evaluation board simple for further development
or modification, all necessary technical data like schematic, layout and components are included in this
chapter.
Application Note
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4.1
Schematic
Figure 12
The MA200E12/17 – top channel
Application Note
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Figure 13
The MA200E12/17 – bottom channel
Application Note
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Figure 14
The MA200E12/17 – top and Bottom IGBT
Figure 15
The MA200E12/17 – external connectors
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4.2
Assembly drawing
Basic circuit and layout for MA200E12 and MA200E17 are the same. The only difference is the type of transil
diode used for Active Clamping. See bill of material for details. Gate resistors should be assembled
accordingly to hints given in Table 3.
Figure 16
The MA200E12/17 – assembly drawing
Application Note
20
V1.0, AN2010-01
AN2010-01
EconoDUAL 3 Module Adapter Board
4.3
Layout
Figure 17
The MA200E12/17 – Top layer
Application Note
21
V1.0, AN2010-01
AN2010-01
EconoDUAL 3 Module Adapter Board
Figure 18
The MA200E12/17 – Bottom layer
4.4
Bill of Material - MA200E12
The bill of material not only includes a part list, but also assembly notes.
The tolerances for resistors should be less or equal ±1 %, for capacitors of the type C0G less or equal ±5 %
and for capacitors of the type X7R less or equal ±10 %.
Table 7
Bill of Material for MA200E12 adapter board
Type
Value / Type
Package
QTY
Name Part
resistor
4µ7
C1206
24
resistor
12R
R0805
6
resistor
1k
R0805
2
C_BCB1, C_BCB2,
C_BCB3, C_BCB4,
C_BCB5, C_BCB6,
C_BCB7, C_BCB8,
C_BCB9, C_BCB10,
C_BCB11, C_BCB12,
C_BCT1, C_BCT2,
C_BCT3, C_BCT4,
C_BCT5, C_BCT6,
C_BCT7, C_BCT8,
C_BCT9, C_BCT10,
C_BCT11, C_BCT12
R_B1, RB_2, RB_3, RT_1,
RT_2, RT_3
R_DB, RD_T
resistor
1R
M1206
6
R_B+, R_B-, R_T+,R_T-,
Application Note
22
Recommanded
Manufacturer
Murata
Assembly
yes
no special
yes
no special
yes
no special
yes
V1.0, AN2010-01
AN2010-01
EconoDUAL 3 Module Adapter Board
R_B_GND, R_T_GND
resistor
27R
resistor
2k2
R0805
1
R_BC1, R_BC2, R_BC3,
R_TC1, R_TC2, R_TC3
R_T
no special
yes
Semiconductor
BAT165
SOD323
4
D1, D2, D_CB, D_CT
Infineon
yes
Semiconductor
ES1D
DO214AC
8
Vishay
yes
Semiconductor
1.5SMC440 A
SMC
4
Vishay
yes
Semiconductor
1.5SMC188 A
SMC
2
D_B1, D_B2, D_BB, D_BB1,
D_BT, D_BT1, D_T1, D_T2
D1.1C, D1.2C, D2.1C,
D2.2C
D1.3C, D2.3C
Vishay
yes
Semiconductor
STTH112U
SOD6
2
D_DB, D_DT
STM
yes
resistor
variable
R1206
2
R_BB, R_BT
no special
yes
resistor
variable
R2010
12
special pulse
resistor
no
Semiconductor
ZXTN2010Z
SOT89
6
Zetex
yes
Semiconductor
ZXTP2012Z
SOT89
6
Zetex
yes
S02P
1
R_GB1, R_GB2, R_GB3,
R_GB4, R_GB5,
R_GB6,R_GT1, R_GT2,
R_GT3, R_GT4, R_GT5,
R_GT6
T_PB1, T_PB2, T_PB3,
T_PT1, T_PT2, T_PT3,
T_NB1, T_NB2, T_NB3,
T_NT1, T_NT2, T_NT3,
X3
Molex
yes
6410-5A
2
X1, X2
Molex
yes
connector
connector
6410-5A
R0805
6
no special
yes
*Pulse power rated types
Application Note
23
V1.0, AN2010-01
AN2010-01
EconoDUAL 3 Module Adapter Board
4.5
Bill of Material - MA200E17
The bill of material not only includes a part list, but also assembly notes.
The tolerances for resistors should be less or equal ±1 %, for capacitors of the type C0G less or equal ±5 %
and for capacitors of the type X7R less or equal ±10 %.
Table 8
Bill of Material for MA200E17 adapter board
Type
Value / Type
Package
QTY
resistor
4µ7
C1206
24
resistor
12R
R0805
6
resistor
1k
R0805
2
resistor
1R
M1206
6
resistor
27R
R0805
6
resistor
2k2
Semiconductor
BAT165
Semiconductor
ES1D
Semiconductor
Name Part
C_BCB1, C_BCB2,
C_BCB3, C_BCB4,
C_BCB5, C_BCB6,
C_BCB7, C_BCB8,
C_BCB9, C_BCB10,
C_BCB11, C_BCB12,
C_BCT1, C_BCT2,
C_BCT3, C_BCT4,
C_BCT5, C_BCT6,
C_BCT7, C_BCT8,
C_BCT9, C_BCT10,
C_BCT11, C_BCT12
R_B1, RB_2, RB_3, RT_1,
RT_2, RT_3
R_DB, RD_T
R_B+, R_B-, R_T+,R_T-,
R_B_GND, R_T_GND
R_BC1, R_BC2, R_BC3,
R_TC1, R_TC2, R_TC3
R_T
R0805
1
SOD323
4
DO214AC
8
1.5SMC510 A
SMC
4
Semiconductor
1.5SMC440 A
SMC
2
D1, D2, D_CB, D_CT
D_B1, D_B2, D_BB, D_BB1,
D_BT, D_BT1, D_T1, D_T2
D1.1C, D1.2C, D2.1C,
D2.2C
D1.3C, D2.3C
Semiconductor
STTH112U
SOD6
2
D_DB, D_DT
resistor
variable
R1206
2
resistor
variable
R2010
12
Semiconductor
ZXTN2010Z
SOT89
6
Semiconductor
ZXTP2012Z
SOT89
6
S02P
1
R_BB, R_BT
R_GB1, R_GB2, R_GB3,
R_GB4, R_GB5, R_GB6,
R_GT1, R_GT2, R_GT3,
R_GT4, R_GT5, R_GT6
T_PB1, T_PB2, T_PB3,
T_PT1, T_PT2, T_PT3,
T_NB1, T_NB2, T_NB3,
T_NT1, T_NT2, T_NT3,
X3
6410-5A
2
X1, X2
connector
connector
6410-5A
Recommanded
Manufacturer
Assembly
Murata
yes
no special
yes
no special
yes
no special
yes
no special
yes
no special
yes
Infineon
yes
Vishay
yes
Vishay
yes
Vishay
yes
STM
yes
no special
yes
special pulse
resistor
no
Zetex
yes
Zetex
yes
Molex
yes
Molex
yes
*Pulse power rated types
Application Note
24
V1.0, AN2010-01
AN2010-01
EconoDUAL 3 Module Adapter Board
5
How to order Evaluation Driver Boards
Every Evaluation Driver Board has its own IFX order number and can be ordered via your Infineon Sales
Partner.
Information can also be found at the Infineons Web Page: www.infineon.com
CAD-data for the board decribed here are available on request. The use of this data is subjected to the
disclaimer given in this AN. Please contact: [email protected]
IFX order number for MA200E12: 34084
IFX order number for MA200E17: 34083
IFX order number for 2ED300E17-SFO: 30272
IFX order number for 2ED300C17-S: 29831
IFX order number for 2ED300C17-ST: 29832
6
References
[1]
Infineon Technologies AG: AN2008-02, 2ED100E12-F2 - 6ED100E12-F2 - Evaluation Driver Board
for EconoDUAL™3 and EconoPACK+™ modules, V1.2, August 2009
[2]
Bäßler, M.; Ciliox A.; Kanschat P.: On the loss – softness trade-off: Are different chip versions
needed for softness improvement? PCIM Europe 2009, Nuremberg, May 2009
[3]
Infineon Technologies AG: AN2007-04, How to calculate and to minimize the dead time requirement
for IGBTs properly, V1.0, May 2007
[4]
Luniewski, P.; Jansen U.; Hornkamp M.: Dynamic voltage rise control –the most efficient way to
control turn-off switching behaviour of IGBT transistors, Pelincec 2005, Warsaw, October 2005
[5]
Luniewski, P.; Jansen. U.: Benefits of system oriented IGBT module design for high power inverters,
EPE 2007, Aalborg, September 2007
Application Note
25
V1.0, AN2010-01