Product Brief 3rd Generation Reverse Conducting IGBT Higher Efficiency and Better Reliability Features The 3rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching Best-in-Class conduction properties in VCE(sat) and Vf Lowest switching losses, highest efficiency Tj(max) = 175°C Soft current turn-off waveforms for low EMI Higher breakthrough voltage VBR(min) = 1350V behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. Infineon RC-H technology has set the benchmark of Tj(max) of 175°C to offer higher lifetime reliability. Recent portfolio extension to 30A and 40A at 1200V and 1350V defines the new trend for higher power density and better reliability devices. 40A 1350V device is capable for switching up to 50kHz with VCE(sat) value of 1.65V at 25°C – a staggering 5% lower loss than the next best competitor. 0.10 Eoff/A [mJ/A] Lowest power dissipation 3 Generation IGBT gives Better thermal management ~25% lower Eoff value and Surge current capability Lower EMI filtering requirements (in comparison to the Reduced system costs preceding R2 family) Excellent quality Highest reliability against peak currents rd RC-H1 0.08 0.06 Benefits ~5% reduction of VCE(sat) RC-H2 RC-H3 0.04 0.02 0.00 1.45 1.47 1.49 1.51 1.53 VCE(sat) [V] 1.55 1.57 Applications 1.59 Single Ended Topology 1200V/1350V (18kHz<=fsw<=50kHz) RC-H3 Product Portfolio in TO-247 1100V Lres 20A Ic VIN Cres VCE 30A 40A www.infineon.com/rch3 1200V 1350V Induction cooking stoves Microwave ovens Rice cookers Solar Other soft switching applications Product Brief 3rd Generation Reverse Conducting IGBT Higher Efficiency and Better Reliability Comprehensive Best-in-Class Portfolio Partnumber Package VCE [V] Ic [A] IHW20N120R3 IHW20N135R3 IHW30N110R3 IHW30N120R3 new! IHW40N120R3 new! IHW30N135R3* new! IHW40N135R3* new! TO-247 TO-247 TO-247 TO-247 TO-247 TO-247 TO-247 1200 1350 1100 1200 1200 1350 1350 VCE(sat) [V] Vf typ [V] Eoff @ 600 V /μs [mJ] Tcase 25°C Tcase 100°C Tj 25°C Tj 175°C Tj 175°C Tj 25°C 40 40 60 60 80 60 80 20 20 30 30 40 30 40 1.48 1.60 1.55 1.55 1.55 1.65 1.65 1.80 1.90 2.00 1.90 1.90 2.00 2.00 1.80 1.80 1.41 1.80 1.80 1.90 1.90 0.95 1.30 1.15 1.47 2.02 1.93 2.50 * Wider power range, enhanced reliability Trade-off at 125°C, Vce=600V, Ic=20A, Vge=15V, Rg=15Ω 3.00 IHW40N135R 2.50 Eoff [m/A] 2.00 IHW30N135R3 1.50 1.00 Best Competitor 20A, 1200V IHW20N120R3** Best Competitor 20A, 1350V IHW20N135R3** IHW30N110R3 IHW30N120R3 IHW40N120R3 0.50 0.00 1.4 1.5 1.6 VCE(sat) [V] 1.7 1.8 1.9 ** 5% lower conduction losses than the best competitor in 1200V and 1350V Performance: 1200V class devices offer Best-in-Class efficiency and thermal performance. 1350V IGBTs provide higher breakdown margin while keeping similar VCE(sat) value as competitor 1200V devices. Reliability: All the RC-H3 products are qualified with Tj(max) of 175°C while extended portfolio in 20A, 30A and 40A with VBR(min) of 1350V provides designers higher reliability. Logistics & Quality: Infineon is proven logistics partner, able to fulfill the highest demand requests. Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2012 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B114-H9756-X-X-7600-DB2012-0015 Date: 10 / 2012 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.