B2S, B4S, B6S Datasheet

B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
FEATURES
~
• UL recognition, file number E54214
• Saves space on printed circuit boards
~
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
TO-269AA (MBS)
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
TO-269AA (MBS)
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
30 A
IR
5 μA
VF at IF = 0.5 A
1.0 V
TJ max.
150 °C
Diode variations
Quad
Case: TO-269AA (MBS)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2S
B2
B4
B6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
200
400
600
V
Device marking code
B4S
B6S
UNIT
Maximum DC blocking voltage
VDC
Maximum average forward output rectified current on
glass-epoxy PCB (fig. 1)
IF(AV)
0.5 (1)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
I2t
5.0
A2s
TJ, TSTG
- 55 to + 150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage per diode
IF = 0.5 A
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 125 °C
Typical junction capacitance per diode
4.0 V, 1 MHz
Revision: 19-Aug-13
TA = 25 °C
SYMBOL
VALUES
UNIT
VF
1.0
V
IR
CJ
5.0
100
13
μA
pF
Document Number: 88893
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
B2S
B4S
RJA
90
RJL
40
B6S
UNIT
°C/W
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.22
80
3000
13" diameter paper tape and reel
B2S-E3/80

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
0.8
0.7
0.6
0.5
Glass
Epoxy
PCB
0.4
0.3
0.2
0.1
Resistive or Inductive Load
0
0
20
40
60
80
100
120
140
TJ = 150 °C
1
0.1
0.01
0.4
160
0.5
Ambient Temperature (°C)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
1000
Instantaneous Reverse Leakage
Current (µA)
35
Peak Forward Surge Current (A)
TJ = 25 °C
TJ = 125 °C
30
25
f = 50 Hz
20
15
10
5
1.0 Cycle
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0
1
10
100
10
20
30
40
50
60
70
80
90
100
Number of Cycles
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 19-Aug-13
Document Number: 88893
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
100
10
1
0.1
10
1
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.029 (0.74)
0.017 (0.43)
TO-269AA (MBS)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0 to 8°
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.106 (2.70)
0.090 (2.30)
0.114 (2.90)
0.094 (2.40)
Revision: 19-Aug-13
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.105 (2.67)
0.095 (2.41)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
Document Number: 88893
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000
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