UNISONIC TECHNOLOGIES CO., LTD UT3009 Preliminary Power MOSFET 30V, 78A N-CHANNEL FAST SWITCHING POWER MOSFETS DESCRIPTION The UTC UT3009 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low gate charge, ultra high cell density and high switching speed. This UTC UT3009 is suitable for most of the synchronous buck converter applications, etc. FEATURES * RDS(ON)=5.5mΩ @ VDSS=30V,ID=78A * High Switching Speed * Low Gate Charge(typical 20.8nC) SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3009L-TN3-R UT3009G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 4 QW-R502-624.a UT3009 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous TC=25°C 78 A ID VGS@10V (Note 1) TC=100°C Drain Current 55 A Pulsed (Note 2) IDM 155 A Avalanche Current IAR 48 A Single Pulsed Avalanche Energy (Note 3) EAS 252 mJ Power Dissipation (TC=25°C) (Note 4) PD 53 W Junction Temperature TJ -55~175 °C Storage Temperature TSTG -55~175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient (Note 1) θJA 62 Junction to Case (Note 1) θJC 2.8 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=48A. 4. The power dissipation is limited by 175°C junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 2 of 4 QW-R502-624.a UT3009 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 30 V 96.4 Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA mV/°C TJ=25°C 1 Drain-Source Leakage Current IDSS VDS=24V,VGS=0V µA TJ=55°C 5 Forward VGS=+20V, VDS=0V +100 nA Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) 1.0 1.5 2.5 V VDS=VGS, ID=250µA VGS(th) Temperature Coefficient △VGS(TH) -6.16 mV/°C Static Drain-Source On-State Resistance VGS=10V, ID=30A 4.7 5.5 mΩ RDS(ON) (Note 2) 7.5 9 mΩ VGS=4.5V, ID=15A Forward Transconductance gFS VDS=5V, ID=30A 22 S DYNAMIC PARAMETERS Input Capacitance CISS 2361 pF VGS=0V, VDS=15V, Output Capacitance COSS 315 pF f=1.0MHz 237 pF Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (4.5V) QG 20.8 nC VGS=4.5V, VDS=20V, Gate to Source Charge QGS 5.3 nC ID=12A 10.5 nC Gate to Drain Charge QGD Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz 1.7 3.4 Ω Turn-ON Delay Time tD(ON) 7.2 9 13.5 ns Rise Time tR ns VDD=12V, VGS=10V, ID=5A, 17.3 21.6 32.4 RG=3.3Ω Turn-OFF Delay Time tD(OFF) 21.3 26.6 40 ns Fall-Time tF 8.4 10.5 15.8 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS 78 A Current (Note 1,4) VD=VG=0V, Force Current Maximum Body-Diode Pulsed Current ISM 155 A (Note 2, 4) Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V, TJ=25°C 1 V (Note 2) VDD=25V, L=0.1mH, 63 Single Pulse Avalanche Energy (Note 3) EAS mJ IAS=24A 2 Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The Min. value is 100% EAS tested guarantee. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-624.a UT3009 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS EAS = VDS 90% BVDSS 1 2 L × IAS2 × BVDSS BVDSS-VDD VDD IAS VGS 10% td(on) tr td(off) ton tf toff Switching Time Waveform VGS Unclamped Inductive Switching Wave UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-624.a