Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3009
Preliminary
Power MOSFET
30V, 78A N-CHANNEL FAST
SWITCHING POWER MOSFETS
„
DESCRIPTION
The UTC UT3009 is an N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON), low gate charge, ultra high cell density and high
switching speed.
This UTC UT3009 is suitable for most of the synchronous buck
converter applications, etc.
„
FEATURES
* RDS(ON)=5.5mΩ @ VDSS=30V,ID=78A
* High Switching Speed
* Low Gate Charge(typical 20.8nC)
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3009L-TN3-R
UT3009G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
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QW-R502-624.a
UT3009
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous
TC=25°C
78
A
ID
[email protected] (Note 1) TC=100°C
Drain Current
55
A
Pulsed (Note 2)
IDM
155
A
Avalanche Current
IAR
48
A
Single Pulsed Avalanche Energy (Note 3)
EAS
252
mJ
Power Dissipation (TC=25°C) (Note 4)
PD
53
W
Junction Temperature
TJ
-55~175
°C
Storage Temperature
TSTG
-55~175
°C
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient (Note 1)
θJA
62
Junction to Case (Note 1)
θJC
2.8
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=48A.
4. The power dissipation is limited by 175°C junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
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UT3009
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
30
V
96.4
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA
mV/°C
TJ=25°C
1
Drain-Source Leakage Current
IDSS
VDS=24V,VGS=0V
µA
TJ=55°C
5
Forward
VGS=+20V, VDS=0V
+100 nA
Gate- Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
1.0
1.5
2.5
V
VDS=VGS, ID=250µA
VGS(th) Temperature Coefficient
△VGS(TH)
-6.16
mV/°C
Static Drain-Source On-State Resistance
VGS=10V, ID=30A
4.7
5.5
mΩ
RDS(ON)
(Note 2)
7.5
9
mΩ
VGS=4.5V, ID=15A
Forward Transconductance
gFS
VDS=5V, ID=30A
22
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
2361
pF
VGS=0V, VDS=15V,
Output Capacitance
COSS
315
pF
f=1.0MHz
237
pF
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
QG
20.8
nC
VGS=4.5V, VDS=20V,
Gate to Source Charge
QGS
5.3
nC
ID=12A
10.5
nC
Gate to Drain Charge
QGD
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
1.7
3.4
Ω
Turn-ON Delay Time
tD(ON)
7.2
9
13.5
ns
Rise Time
tR
ns
VDD=12V, VGS=10V, ID=5A, 17.3 21.6 32.4
RG=3.3Ω
Turn-OFF Delay Time
tD(OFF)
21.3 26.6 40
ns
Fall-Time
tF
8.4
10.5 15.8
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
78
A
Current (Note 1,4)
VD=VG=0V, Force Current
Maximum Body-Diode Pulsed Current
ISM
155
A
(Note 2, 4)
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V, TJ=25°C
1
V
(Note 2)
VDD=25V, L=0.1mH,
63
Single Pulse Avalanche Energy (Note 3)
EAS
mJ
IAS=24A
2
Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The Min. value is 100% EAS tested guarantee.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power
dissipation.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT3009
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
EAS =
VDS
90%
BVDSS
1
2
L × IAS2 ×
BVDSS
BVDSS-VDD
VDD
IAS
VGS
10%
td(on)
tr
td(off)
ton
tf
toff
Switching Time Waveform
VGS
Unclamped Inductive Switching Wave
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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