UNISONIC TECHNOLOGIES CO., LTD UTF1404 Preliminary Power MOSFET 160A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTF1404 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON) and high switching speed. The UTC UTF1404 is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts, etc. FEATURES * RDS(ON)=3.5mΩ @ VGS=10V,ID=95A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTF1404L-TA3-T UTF1404G-TA3-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-679.a UTF1404 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 40 V ±20 V TC=25°C 162 (Note 4) A ID Continuous (VGS=10V) Drain Current TC=100°C 115 (Note 4) A Pulsed (Note 2) TC=25°C IDM 650 A Avalanche Current (Note 2) IAR 95 A 519 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 20 mJ Power Dissipation (TC=25°C) PD 166 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by maximum junction temperature 3. Starting TJ=25°C, L=0.12mH, RG=25Ω, IAS=95A 4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 0.75 UNIT °C/W °C/W 2 of 6 QW-R502-679.a UTF1404 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0V, ID=250µA VDS=40V, VGS=0V VDS=32V, VGS=0V, TJ=150°C VGS=+20V VGS=-20V MIN TYP MAX UNIT 40 20 250 +200 -200 V µA µA nA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=95A (Note 2) 3.5 4 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 7360 pF VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 1680 pF Reverse Transfer Capacitance CRSS 240 pF SWITCHING PARAMETERS 160 200 nC Total Gate Charge QG ID=95A, VDS=32V, VGS=10V Gate to Source Charge QGS 35 nC (Note 2) Gate to Drain Charge QGD 42 60 nC Turn-ON Delay Time tD(ON) 17 ns Rise Time tR 140 ns VDD=20V, ID=95A, RG=2.5Ω, Turn-OFF Delay Time tD(OFF) RD=0.21Ω (Note 2) 72 ns Fall-Time tF 26 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS (Note 3) 162 A Maximum Body-Diode Pulsed Current ISM (Note 1) 650 A Drain-Source Diode Forward Voltage VSD IS=95A, VGS=0V, TJ=25°C (Note 2) 1.3 V Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature 2. Pulse width≤300µs, Duty cycle≤2% 3. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-679.a UTF1404 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-679.a UTF1404 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-679.a UTF1404 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-679.a