Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N65A
Power MOSFET
7A, 650V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 7N65A is a high voltage N-Channel enhancement
mode power field effect transistors designed to have minimize
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode. This
power MOSFET is well suited for high efficiency switch mode
power supply.
„
FEATURES
* RDS(ON) = 1.4Ω @VGS = 10 V
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N65AL-TA3-T
7N65AG-TA3-T
7N65AL-TF1-T
7N65AG-TF1-T
7N65AL-TF3-T
7N65AG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
7N65AL-TA3-T
(1)Packing Type
(2)Package Type
(1) T: Tube
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
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Copyright © 2011 Unisonic Technologies Co., Ltd
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F
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7N65A
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7
A
Continuous Drain Current
ID
7
A
Pulsed Drain Current (Note 2)
IDM
28
A
330
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
7.5
mJ
TO-220
65
W
Power Dissipation
PD
TO-220F/TO-220F1
30
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ(MAX)
3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F1
TO-220
Junction to Case
TO-220F/TO-220F1
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
83.3
62.5
1.92
4.16
UNIT
°C/W
°C/W
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7N65A
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =3.5A (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=325V, ID =7A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=520V, ID=7A,
Gate-Source Charge
QGS
VGS=10 V (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS =7A,
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
650
2.0
1.05
10
100
-100
V
µA
nA
nA
4.0
1.4
V
Ω
950 1430
85 130
12
18
pF
pF
pF
16
60
80
65
28
5.5
11
42
8.3
17
ns
ns
ns
ns
nC
nC
nC
1.4
V
7
A
28
A
365
4.23
ns
µC
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„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-585.B
7N65A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2μF
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
1mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
„
Power MOSFET
Reverse Drain Current vs.
Source Drain Voltage
ON Resistance vs. Drain Current
Note:
1. Td=25°C
2.0 2. Pulsed test
Reverse Drain Current, IS (A)
ON Resistance, RDS(ON) (Ω)
2.5
VGS=10V
1.5
VGS=20V
1.0
0.8
0
0
5
10
15
20
Note:
1. VDS=10V
2. Pulse test
101
100
10-1
0.4
25
Drain Current, ID (A)
0.6
0.8
1.0
8 1.2
1.4
Capacitance (pF)
Gate Source Voltage, VGS (V)
Source Drain Voltage, VSD (V)
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7N65A
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Note:
1. VGS = 0V
2. ID = 250µA
1.1
1.0
0.9
0.8
-50 -25 0
ON-Resistance vs. Junction Temperature
Note:
1. VGS = 10V
2.5 2. ID = 3.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150 175
Junction Temperature, TJ (°C)
25 50 75 100 125 150 175
Junction Temperature, TJ (°C)
Drain Current, ID (A)
Drain Current, ID (A)
3.0
1m
s
VDSS MAX
1.2
Drain-Source Voltage vs.
Junction Temperature
ON-Resistance, RDS(ON) (Normalized)
Drain-Source Voltage, VDSS (Normalized)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-585.B
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