Datasheet

UNISONIC TECHNOLOGIES CO., LTD
8N65
Power MOSFET
8A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 8N65 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

FEATURES
* RDS(ON) < [email protected] = 10 V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N65L-TA3-T
8N65G-TA3-T
8N65L-TF3-T
8N65G-TF3-T
8N65L-TF1-T
8N65G-TF1-T
8N65L-TF3T-T
8N65G-TF3T-T
8N65L-T2Q-T
8N65G-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
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QW-R502-591.D
8N65

Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
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8N65

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
8
A
8
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
32
A
230
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
147
W
Power Dissipation
PD
TO-220F/TO-220F1
48
W
TO-220F3
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=7.1mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F3
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SYMBOL
θJA
θJC
RATING
62.5
0.85
UNIT
°C/W
°C/W
2.6
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
650
V
VDS = 650 V, VGS = 0 V
10
µA
100 nA
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 4A
1.2 1.4
Ω
DYNAMIC CHARACTERISTICS
1145 1255 pF
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
118 135 pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
19
25
pF
SWITCHING CHARACTERISTICS
84 100 ns
Turn-On Delay Time
tD(ON)
VDD = 325V, ID =8A,
Turn-On Rise Time
tR
100 130 ns
RG = 25Ω
Turn-Off Delay Time
tD(OFF)
275 320 ns
(Note 1, 2)
Turn-Off Fall Time
tF
64.5 140 ns
Total Gate Charge
QG
115 130 nC
VDS= 520V,ID=8A,
Gate-Source Charge
QGS
12
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
QGD
40
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =8A
1.4
V
Maximum Continuous Drain-Source Diode
IS
8
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
32
A
Forward Current
365
ns
Reverse Recovery Time
tRR
VGS = 0 V, IS =8A,
dIF/dt = 100 A/µs (Note 2)
Reverse Recovery Charge
QRR
3.4
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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8N65

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
D.U.T.
10V
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On-State Characteristics
Drain Current, ID (A)
100
Transfer Characteristics
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5 V
Bottorm:5.0V
10
10
1
Drain Current, ID (A)

5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°C
0.1
25°C
1
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON)
(ohm)
4
3
VGS=20V
2
1
5
10
15
Drain Current, ID (A)
20
Ciss
Capacitance (pF)
1500
1300
1100
Coss
Crss
500
300 Notes:
100 1. VGS=0V
2. f = 1MHz
0
0.1
1
10
Drain-SourceVoltage, VDS (V)
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25°C
1
Notes:
1. VGS=0V
2. 250µs Test
1.4 1.6
1.8
Source-Drain Voltage, VSD (V)
12
Gate-Source Voltage, VGS (V)
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
1900
900
10
150°C
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Capacitance Characteristics
(Non-Repetitive)
700
8
10
VGS=10V
1700
6
Body Diode Forward Voltage vs. Source
Current
TJ=25°C
0
4
Gate-Source Voltage, VGS (V)
5
0
Notes:
1. VDS=40V
2. 250µs Pulse Test
0.1
2
1
10
Drain-to-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain
Current and Gate Voltage
6
150°C
Gate Charge Characteristics
ID=7.5A
10
VDS=520V
8
VDS=300V
VDS=120V
6
4
2
0
0
5
10
15
20
25
30
Total Gate Charge, QG (nC)
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TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Temperature
1.2
On-Resistance Junction Temperature
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage, BVDSS
(Normalized)

1.1
1.0
0.9
Note:
1. VGS=0V
2. ID=250µA
0.8
-100
-50
0
50
100
150
200
2.5
2.0
1.5
1.0
Note:
1. VGS=10V
2. ID=4A
0.5
0.0
-100
-50
0
50
100
150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Maximum Safe Operating Area
Maximum Drain Current vs. Case
Temperature
100
10
Operation in This Area is Limited by RDS(on)
10µs
100µs
10
1ms
10ms
DC
1
Notes:
1. TJ=25°C
2. TJ=150°C
0.1 3. Single Pulse
1
200
8
Drain Current, ID (A)
Drain Current, ID (A)
3.0
6
4
2
0
10
100
1000
Drain-Source Voltage, VDS (V)
25
50
75
100
125
150
Case Temperature, TC (°C)
Transient Thermal Response Curve
Thermal Response, θJC (t)
1
D=0.5
D=0.2
D=0.1
0.1
D=0.05
0.02
0.01
Notes:
Single pulse 1. θJC (t) = 0.85°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.01
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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