Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3P06
Power MOSFET
3A, 60V (D-S) P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UT3P06 is a P-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON) and low gate charge.
This UTC UT3P06 can be operated with -4.5V low gate voltage.

FEATURES
* RDS(ON) < 220mΩ @ VGS=-10V, ID=-3A
RDS(ON) < 310mΩ @ VGS=-4.5V, ID=-1.9A
* Low gate charge (Typically 7nC)


SYMBOL
ORDERING INFORMATION
Note:

Ordering Number
Package
UT3P06G-AE3-R
UT3P06G-AG6-R
Pin Assignment: S: Source
G: Gate
SOT-23
SOT-26
1
S
D
Pin Assignment
2
3
4
5
G
D
D
G
S
D
6
D
Packing
Tape Reel
Tape Reel
D: Drain
MARKING
SOT-23
SOT-26
3P06G
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-673.E
UT3P06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Drain Current
Avalanche Current (L=0.1mH)
SYMBOL
VDSS
VGSS
ID
IDM
IAR
SOT-23
SOT-26
Power Dissipation (Note 1, 2)
PD
Junction Temperature
Storage Temperature

TJ
TSTG
RATINGS
-60
±20
-3
-10
-7
0.35
1.1
+150
-55~+150
UNIT
V
V
A
A
A
W
°C
°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
350
Junction to Ambient (Note 1,2)
θJA
°C/W
SOT-26
110
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on FR4 Board.
3. t ≤ 5 sec

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=-250µA, VDS=0V
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V , TJ=150°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
VGS=-10V, ID=-3A
Static Drain-Source On-State Resistance
RDS(ON)
(Note 1)
VGS=-4.5V, ID=-1.9A
On State Drain Current (Note 1)
ID(ON)
VGS=-10V, VDS=-5V
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=-10V, VDS=-30V, ID=-3A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-30V, VGEN=-10V, ID=-1A,
RL=30 Ω , RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=-3A, VGS=0V (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-60
V
-1
-50
+100
-100
-1
µA
nA
nA
V
190
265
220
310
-10
mΩ
A
7
1.6
1.2
8
12
23
12
14
16
24
45
25
nC
nC
nC
ns
ns
ns
ns
-0.8
-1.7
-10
-1.2
A
A
V
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QW-R502-673.E
UT3P06

Power MOSFET
TYPICAL CHARACTERISTICS
-300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
-300
-250
-250
-200
-200
-150
-150
-100
-100
-50
-50
0
-40
0
-20
-60
-80
-100
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
-3.5
-3.0
VGS=-10V, ID=-3A
-2.5
0
0
-0.5 -1.0 -1.5 -2.0
-2.5 -3.0
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain Voltage
-3.5
-3.0
-2.5
-2.0
-2.0
VGS=-4.5V, ID=-1.9A
-1.5
-1.5
-1.0
-1.0
-0.5
-0.5
0
0
-200 -400 -600
-800 -1000
Drain to Source Voltage, VDS (mV)
0
0
-0.2
-0.4 -0.6
-0.8
-1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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