Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT150N04
Power MOSFET
150A, 40V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UT150N04 is a N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
RDS(ON) and high switching speed.
The UTC UT150N04 is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
„
FEATURES
* RDS(ON)=3.5mΩ @ VGS=10V,ID=95A
* High Switching Speed
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT150N04L-TA3-T
UT150N04G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
40
V
±20
V
TC=25°C
150 (Note 5)
A
ID
Continuous (VGS=10V)
Drain Current
TC=100°C
115 (Note 5)
A
Pulsed (Note 2)
TC=25°C
IDM
600
A
Avalanche Current (Note 2)
IAR
95
A
Single Pulsed (Note 3)
EAS
519
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
20
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.0
V/ns
Power Dissipation (TC=25°C)
PD
166
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. Starting TJ=25°C, L=0.12mH, RG=25Ω, IAS=95A
4. ISD≤95A, di/dt≤150A/µs, VDD≤BVDSS, TJ≤175°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A
„
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
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SYMBOL
θJA
θJC
RATINGS
62
0.75
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
40
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1mA
0.036
V/°C
VDS=40V, VGS=0V
20
µA
Drain-Source Leakage Current
IDSS
VDS=32V, VGS=0V, TJ=150°C
250 µA
Gate- Source
Forward
VGS=+20V
+200 nA
IGSS
Leakage Current
VGS=-20V
Reverse
-200 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=95A (Note 2)
3.5
4
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
7360
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
1680
pF
240
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=1.0V, f=1.0MHz
6630
pF
Output Capacitance
COSS
1490
pF
VGS=0V, VDS=32V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
160 200 nC
ID=95A, VDS=32V, VGS=10V
Gate to Source Charge
QGS
35
nC
(Note 2)
42
60
nC
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
17
ns
Rise Time
tR
140
ns
VDD=20V, ID=95A, RG=2.5Ω,
RD=0.21Ω (Note 2)
Turn-OFF Delay Time
tD(OFF)
72
ns
Fall-Time
tF
26
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
MOSFET symbol
IS
150
A
showing the integral
(Note 3)
reverse p-n junction
Maximum Body-Diode Pulsed Current
ISM
600
A
diode.
(Note 1)
Drain-Source Diode Forward Voltage
VSD
IS=150A,VGS=0V,TJ=25°C(Note 3)
1.3
V
Body Diode Reverse Recovery Time
trr
71
110 ns
IF=95A, di/dt=100A/µs, TJ=25°C
(Note 2)
180 270 µC
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature
2. Pulse width≤300µs, Duty cycle≤2%
3. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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