UNISONIC TECHNOLOGIES CO., LTD UT2804 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT2804 uses advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT2804 is suitable for low-profile applications with through-hole version and low voltage applications such as DC/DC converters. FEATURES * Low On-Resistance * Simple Drive Requirement * Fast Switching Speed SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2804G-TN3-R UT2804L-TN3-R Note: G: Gate, D: Drain, S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 3 QW-R502-418.a UT2804 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C Unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 40 V ±20 V TC=25°C 10 Continuous Drain Current A ID TC=100°C 8 Pulsed Drain Current (Note 2) IDM 40 A TC=25°C 32 Power Dissipation W PD TC=100°C 22 Operating Junction Temperature TJ -55 ~ 150 °C Storage Temperature TSTG -55 ~ 150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. Duty cycle ≤ 1% SYMBOL VDS VGS THERMAL RESISTANCE RATINGS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 75 3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current On-State Drain Current (Note 1) ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) IGSS ID(ON) VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=32V, VGS=0V VDS=30V, VGS=0V, TC=125°C VDS=0V, VGS=±20V VDS=10V, VGS=10V 40 V 40 1 µA 10 ±250 nA A VDS=VGS, ID=250µA VGS=-4.5V, ID=8A VGS=10V, ID=10A VDS=10V, ID=10A 1 Forward Transconductance (Note 1) gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=10V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=10V, VDS=0.5V(BR)DSS, ID=10A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDS=20V, Rise Time tR ID≅ 1A, RGS=6Ω, RL=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=IS, VGS=0V (Note 1) Reverse Recovery Time tRR IF=5A, dIF/dt=100A/µs Reverse Recovery Charge QRR Continuous Current IS Pulsed Current (Note 3) ISM Note: 1. Pulse test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2％. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.5 30 21 19 2.5 42 28 V mΩ S 790 175 65 pF pF pF 16 2.5 2.1 2.2 4.4 7.5 15 11.8 21.3 3.7 7.4 nC nC nC ns ns ns ns 1 V 1.3 2.6 ns nC A A 15.5 7.9 2 of 3 QW-R502-418.a UT2804 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-418.a