PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −30 V IC collector current - - −4.2 A ICM peak collector current single pulse; tp ≤ 1 ms - - −10 A RCEsat collector-emitter saturation resistance IC = −4 A; IB = −400 mA - 58 86 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Graphic symbol 2 3 3 2 1 1 006aaa231 3. Ordering information Table 3. Ordering information Type number PBSS4032PX Package Name Description Version SC-62 plastic surface-mounted package; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS4032PX *6J [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PBSS4032PX_1 Product data sheet Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V VEBO emitter-base voltage open collector - −5 V IC collector current - −4.2 A ICM peak collector current single pulse; tp ≤ 1 ms - −10 A IB base current - −1 A All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 600 mW [2] - 1650 mW [3] - 2500 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac174 3.0 Ptot (W) (1) 2.0 (2) 1.0 (3) 0.0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. PBSS4032PX_1 Product data sheet Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 210 K/W [2] - - 75 K/W [3] - - 50 K/W - - 20 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac175 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032PX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 006aac176 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 10−1 10−5 0 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac177 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 10 0.2 0.1 0.05 1 0.01 10−1 10−5 0.02 0 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032PX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions collector-base cut-off VCB = −30 V; IE = 0 A current VCB = −30 V; IE = 0 A; Tj = 150 °C Max Unit - - −100 nA - - −50 μA collector-emitter cut-off current VCE = −24 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V IC = −500 mA 200 350 - IC = −1 A 200 320 - IC = −2 A 150 240 - 60 100 - IC = −1 A; IB = −50 mA - −110 −165 mV IC = −1 A; IB = −10 mA - −160 −240 mV IC = −2 A; IB = −40 mA - −200 −300 mV IC = −4 A; IB = −400 mA - −230 −345 mV VCEsat [1] collector-emitter saturation voltage [1] IC = −4 A; IB = −200 mA - −270 −400 mV [1] - 58 86 mΩ IC = −1 A; IB = −50 mA [1] - −0.78 −0.9 V IC = −4 A; IB = −400 mA [1] - −1.02 −1.1 V VCE = −2 V; IC = −2 A [1] - −0.81 −0.9 V - 30 - ns RCEsat collector-emitter IC = −4 A; IB = −400 mA saturation resistance VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage td delay time VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A tr rise time ton turn-on time ts - 60 - ns - 90 - ns storage time - 140 - ns tf fall time - 80 - ns toff turn-off time - 220 - ns fT transition frequency - 115 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 85 - pF [1] Product data sheet Typ ICES IC = −4 A PBSS4032PX_1 Min VCE = −10 V; IC = −100 mA; f = 100 MHz Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 006aac202 600 IB (mA) = −600 IC (A) (1) hFE 006aac203 −10.0 −540 −480 −420 −360 −8.0 −300 −240 −180 400 −6.0 (2) −120 −60 −4.0 200 (3) −2.0 0 −10−1 −1 −10 −102 0.0 0.0 −103 −104 IC (mA) −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aac204 −1.4 Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aac205 −1.4 VBE (V) VBEsat (V) −1.0 −1.0 (1) (1) (2) (2) −0.6 −0.6 (3) (3) −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 −1 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values PBSS4032PX_1 Product data sheet Fig 8. −10 −102 −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 006aac206 −1 006aac207 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac208 103 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) 1 006aac209 103 (1) 1 (2) 10−1 (2) 10−1 (3) 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) (3) 10−2 −10−1 −1 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 PBSS4032PX_1 −10 Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4032PX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 0.53 0.40 1.5 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 15. Package outline SOT89 (SC-62) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description PBSS4032PX SOT89 [1] PBSS4032PX_1 Product data sheet Packing quantity 3000 10000 8 mm pitch, 12 mm tape and reel; T1 [2] -115 -135 8 mm pitch, 12 mm tape and reel; T3 [3] -120 - For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T3: 90° rotated taping All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1 (3×) 1.1 (2×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 16. Reflow soldering footprint SOT89 (SC-62) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig 17. Wave soldering footprint SOT89 (SC-62) PBSS4032PX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4032PX_1 20100401 Product data sheet - - PBSS4032PX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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All rights reserved. 13 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS4032PX_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 1 April 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PBSS4032PX NXP Semiconductors 30 V, 4.2 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 April 2010 Document identifier: PBSS4032PX_1