Datasheet

UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
Power MOSFET
60A, 50V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with perfect RDS(ON),
high switching speed, high current capacity and low gate charge.
The UTC 60N05 is suitable for motor control, AC-DC or DC-DC
converters and audio amplifiers, etc.
„
FEATURES
* RDS(ON)=12mΩ @ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N05L-TA3-T
60N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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60N05
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage (VGS=0)
Drain-Gate Voltage (RGS=20k Ω)
Gate-Source Voltage
RATINGS
UNIT
50
V
50
V
±20
V
60
A
TC=25°C
ID
Continuous
Drain Current
TC=100°C
50
A
Pulsed (Note 1)
IDM
240
A
Avalanche Current
IAR
60
A
EAS
600
mJ
Avalanche Energy
EAR
150
mJ
Power Dissipation
PD
125
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
„
SYMBOL
VDSS
VDGR
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=Max Rating, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
60
VDS=VGS, ID=250µA
VGS=10V, ID=30A
2
VGS=0V, VDS=25V, f=1.0MHz
250
+100
-100
V
µA
nA
nA
3
4
0.012 0.014
V
Ω
3900
950
250
pF
pF
pF
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60N05
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=40V, ID=60A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=25V, ID=30A, RG=4.7Ω,
VGS=10V
Rise Time
tR
Fall-Time
tF
VDD=40V, ID=60A, RG=4.7Ω,
VGS=10V
Off-Voltage Rise Time
tR(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
(Note 1)
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=60A, VGS=0V (Note 2)
Body Diode Reverse Recovery Time
trr
ISD=60A, VDD=30V, TJ=150°C,
di/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle 1.5%
MIN TYP MAX UNIT
130
26
55
30
180
35
135
150
0.56
170
nC
nC
nC
ns
ns
ns
ns
60
240
1.6
A
A
V
ns
µC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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