Analog Power AM6411P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 13 @ VGS = -4.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • -20 19 @ VGS = -2.5V -7.9 35 @ VGS = -1.8V -5.8 TSSOP-8 Top View D S S G Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSSOP-8 saves board space Fast switching speed High performance trench technology ID (A) -9.5 S D S S D 8 7 6 1 2 3 4 5 G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS -20 Drain-Source Voltage V ±12 VGS Gate-Source Voltage TA=25oC Continuous Drain Currenta o TA=70 C Pulsed Drain Currentb a Continuous Source Current (Diode Conduction) TA=25oC Power Dissipationa o TA=70 C THERMAL RESISTANCE RATINGS Parameter Symbol t <= 10 sec Steady State RθJA A -7.7 IDM -30 IS -1.5 A 1.8 PD W 1.2 TJ, Tstg Operating Junction and Storage Temperature Range Maximum Junction-to-Ambienta -9.5 ID o C -55 to 150 Maximum 70 115 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM6411_D Analog Power AM6411P o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = -250 uA Min Limits Unit Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage IDSS A A rDS(on) g fs VSD -0.7 VDS = 0 V, VGS = ±12 V ±100 nA VDS = -16 V, VGS = 0 V -1 -10 uA VDS = -16 V, VGS = 0 V, T J = 55oC VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -9.5 A VGS = -2.5 V, ID = -7.9 A VGS = -1.8 V, ID = -5.8 A VDS = -15 V, ID = -9.5 A IS = 1.5 A, VGS = 0 V -20 A 13 19 35 45 -0.6 mΩ S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr t d(off) tf VDS = -10 V, VGS = -4.5 V, ID = -9.5 A VDD = -10 V, RL = 6 Ω , ID = -1 A, VGEN = -4.5 V 55.0 7.2 12.0 45 75 240 110 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM6411_D Analog Power AM6411P Typical Electrical Characteristics 50 50 VGS = -4.5V 40 ID - Drain Current (A) 40 ID - Drain Current (A) 25oC T A = -55oC -2.5V -1.5V 30 20 125oC 30 20 10 10 0 0 0 0 0.5 1 1.5 0.5 2 1 1.5 2 15 20 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 6000 CISS 5000 2 C - Capacitance (pF) rDS(ON) - Normailized On-Resistance 2.2 VGS = - 1.5V 1.8 1.6 1.4 -2.5V 1.2 4000 3000 2000 COSS 1000 1 -4.5V CRSS 0 0.8 0 0 10 20 30 40 5 50 10 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 -5 VGS = - 4.5V rDS(ON) - On-Resistance (Ohm) (Normalized) VGS - Gate-to-Source Voltage ( V ) ID=11.5A 1.4 -4 1.2 -3 -2 1 0.8 -1 0.6 0 0 8 16 24 32 -50 40 Q g - Total Gate Charge (nC) 0 25 50 75 100 125 o TJ - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AM6411_D 150 175 Analog Power AM6411P Typical Electrical Characteristics 10 rDS(ON), On-Resistance (OHM) IS - Source CURRENT (A) 0.035 1 T A = 125oC 0.1 o 25 C 0.01 0.001 0.0001 0.03 0.025 0.02 0.015 0.01 0.005 0 0.2 0.4 0.6 0 0.8 1 V SD - Source-to-Drain VOLTAGE (V) 2 3 4 5 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage P(pk), PEAK TRANSIENT POWER (W) 50 25 V GS(th) Variance (V) ID = -250µA 24 23 22 40 30 20 10 0 0 .0 0 1 21 -50 -25 0 25 50 75 100 125 150 175 0 .1 o TA - Temperature ( C) 10 10 0 0 t1, T IME (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient 1 RqJ A( t ) = r ( t ) + RqJ A D = 0. 5 RqJ A = 12 5 C/ W 0. 2 0.1 0. 1 P (p 0 . 05 0.01 t 0. 02 t 0 . 01 T J - T A = P * RqJ A( t ) 0.001 SINGLE P ULSE 0.0001 0.001 D 0.01 0.1 1 10 C 10 0 l D 1/ 2 10 0 0 t1, TIME (s ec) 4 PRELIMINARY Publication Order Number: DS-AM6411_D Analog Power AM6411P Package Information TSSOP-8: 8LEAD 5 PRELIMINARY Publication Order Number: DS-AM6411_D