BAS40-00 to BAS40-06 Datasheet

BAS40-00 to BAS40-06
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guardring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
BAS40-00
BAS40-04
3
3
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Top View
Case: SOT-23
1
2
1
BAS40-05
2
Weight: approx. 8.8 mg
BAS40-06
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
3
3
Top View
1
1
2
2
PARTS TABLE
PART
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
Single diode
43
Dual diodes serial
44
Dual diodes common cathode
45
Dual diodes common anode
46
BAS40-00-E3-08 or BAS40-00-E3-18
BAS40-00
BAS40-00-HE3-08 or BAS40-00-HE3-18
BAS40-04-E3-08 or BAS40-04-E3-18
BAS40-04
BAS40-04-HE3-08 or BAS40-04-HE3-18
BAS40-05-E3-08 or BAS40-05-E3-18
BAS40-05
BAS40-05-HE3-08 or BAS40-05-HE3-18
BAS40-06-E3-08 or BAS40-06-E3-18
BAS40-06
BAS40-06-HE3-08 or BAS40-06-HE3-18
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Repetitive peak reverse voltage
TEST CONDITION
VRRM = VRWM = VR
40
V
Forward continuous current (1)
IF
200
mA
IFSM
600
mA
Ptot
200
mW
Surge forward current (1)
Power dissipation
tp < 1 s
(1)
UNIT
Note
(1) Device on fiberglass substrate, see layout on next page.
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
RthJA
500
K/W
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 125
°C
Thermal resistance junction to ambient air
TEST CONDITION
(1)
Junction temperature
Note
(1) Device on fiberglass substrate, see layout on next page.
Rev. 2.0, 25-Feb-13
Document Number: 85701
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS40-00 to BAS40-06
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Reverse breakdown voltage
IR = 10 μA (pulsed)
V(BR)
40
VR = 30 V
IR
Leakage current
Forward voltage
MAX.
UNIT
20
100
nA
V
IF = 1 mA
VF
380
mV
IF = 40 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
5
pF
IF = IR = 10 mA, iR = 1 mA, RL = 100 
trr
5
ns
Forward voltage (1)
Diode capacitance
Reverse recovery time
TYP.
4
Note
(1) Pulse test t < 300 μs
p
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 2.0, 25-Feb-13
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document Number: 85701
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000
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