Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4140V
40 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2001 Nov 05
2002 Jun 20
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
FEATURES
QUICK REFERENCE DATA
• 300 mW total power dissipation
SYMBOL
• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin
package
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
1
A
ICRP
peak collector current
2
A
RCEsat
equivalent on-resistance
<190
mΩ
• Improved thermal behaviour due to flat leads
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capabilities
PARAMETER
MAX.
UNIT
PINNING
• Reduced required PCB area.
PIN
APPLICATIONS
DESCRIPTION
1
collector
2
collector
• General purpose switching and muting
3
base
• LCD backlighting
4
emitter
• Supply line switching circuits
5
collector
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
collector
DESCRIPTION
handbook, halfpage
NPN low VCEsat transistor with high current capability in a
SOT666 plastic package. PNP complement: PBSS5140V.
6
5
4
1, 2, 5, 6
3
MARKING
TYPE NUMBER
PBSS4140V
4
MARKING CODE
1
22
Top view
Fig.1
2002 Jun 20
2
2
3
MAM444
Simplified outline (SOT666) and symbol.
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
3
A
ICRP
repetitive peak collector current
−
2
A
IB
base current (DC)
−
300
mA
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
−
300
mW
Tamb ≤ 25 °C; note 3
−
500
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
note 1
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: tp ≤ 30 ms; δ ≤ 0.2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
note 1
410
K/W
note 2
215
K/W
notes 1 and 3
110
K/W
Notes
1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Operated under pulsed conditions: tp ≤ 30 ms; δ ≤ 0.2.
Soldering
The only recommended soldering method is reflow soldering.
2002 Jun 20
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 40 V; IE = 0
−
−
100
nA
VCB = 40 V; IE = 0; Tamb = 150 °C
−
−
50
μA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCE = 5 V; IC = 500 mA
300
−
900
VCE = 5 V; IC = 1 A
200
−
−
VCE = 5 V; IC = 2 A; note 1
75
−
−
−
50
80
mV
IC = 500 mA; IB = 50 mA
−
70
110
mV
IC = 1 A; IB = 100 mA; note 1
−
150
190
mV
IC = 2 A; IB = 200 mA; note 1
−
320
440
mV
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 1 mA
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
−
150
<190
mΩ
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Jun 20
4
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
MLD746
1000
MLD747
10
handbook, halfpage
handbook, halfpage
hFE
800
VBE
(1)
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
0
−10−1
−1
−10
−102
10−1
10−1
−103
−104
IC (mA)
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD748
103
handbook, halfpage
102
10
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLD749
102
handbook, halfpage
VCEsat
(mV)
RCEsat
(Ω)
102
10
(1)
(2)
(3)
1
10
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
10−1
10−1
103
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Jun 20
5
1
10
102
IC (mA)
103
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
MLD750
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
1000
800
IC (mA)
VCE = 10 V.
Fig.6
Transition frequency as a function of
collector current.
2002 Jun 20
6
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2002 Jun 20
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jun 20
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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Printed in The Netherlands
613514/02/pp9
Date of release: 2002 Jun 20
Document order number: 9397 750 09428
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