Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D102
PBSS5140U
40 V low VCEsat PNP transistor
Product data sheet
Supersedes data of 2001 Mar 27
2001 Jul 20
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
−40
V
ICM
peak collector current
−2
A
RCEsat
equivalent on-resistance
<500
mΩ
• Improved device reliability due to reduced heat
generation
• Enhanced performance over SOT23 1A standard
packaged transistor.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
• General purpose switching and muting
• LCD back lighting
• Supply line switching circuits
DESCRIPTION
1
base
2
emitter
3
collector
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
3
handbook, halfpage
3
DESCRIPTION
PNP low VCEsat transistor in a SOT323 (SC-70) plastic
package.
1
2
MARKING
1
TYPE NUMBER
PBSS5140U
MARKING CODE
Top view
MAM048
51t
Fig.1
2001 Jul 20
2
2
Simplified outline (SOT323; SC-70) and
symbol.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IBM
peak base current
−
−1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
250
mW
Tamb ≤ 25 °C; note 2
−
350
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
500
K/W
in free air; note 2
357
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2001 Jul 20
3
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −40 V; IC = 0
−
−
−100
nA
VCB = −40 V; IC = 0; Tamb = 150 °C
−
−
−50
μA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB = 0
−
−
−100
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
nA
hFE
DC current gain
VCE = −5 V; IC = −1 mA
300
−
−
VCE = −5 V; IC = −100 mA
300
−
800
VCE = −5 V; IC = −500 mA
250
−
−
VCE = −5 V; IC = −1 A
160
−
−
IC = −100 mA; IB = −1 mA
−
−
−200
mV
IC = −500 mA; IB = −50 mA
−
−
−250
mV
IC = −1 A; IB = −100 mA
−
−
−500
mV
VCEsat
saturation voltage
RCEsat
equivalent on-resistance
IC = −500 mA; IB = −50 mA; note 1
−
300
<500
mΩ
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −50 mA
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−
−1
V
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
12
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Jul 20
4
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
MLD543
1200
MLD544
−10
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
(1)
800
−1
(1)
(2)
(2)
400
(3)
(3)
0
−10−1
−1
−10
−102
−10−1
−10−1
−103
−104
IC (mA)
−1
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD545
−103
handbook, halfpage
−10
−102
Base-emitter voltage as a function of
collector current; typical values.
MLD677
102
handbook, halfpage
VCEsat
−103
−104
IC (mA)
RCEsat
(Ω)
(mV)
(1)
−102
10
(3)
(1)
(2)
(2)
−10
1
(3)
−1
−1
−10
−102
−103
IC (mA)
10−1
−10−1
−104
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Jul 20
5
−10
−10−2
−10−3
−10−4
IC (mA)
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
MLD678
300
handbook, halfpage
fT
(MHz)
200
100
0
−200
0
−400
−600
−800
−1000
IC (mA)
VCE = −10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Transition frequency as a function of
collector current; typical values.
2001 Jul 20
6
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Jul 20
REFERENCES
IEC
JEDEC
EIAJ
SC-70
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5140U
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
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not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2001 Jul 20
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp9
Date of release: 2001 Jul 20
Document order number: 9397 750 08432
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