Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5240V
40 V low VCEsat PNP transistor
Product data sheet
2003 Jan 30
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
SYMBOL
• High collector current capability IC and ICM
VCEO
collector-emitter voltage
−40
V
IC
collector current (DC)
−1.8
A
• High efficiency leading to reduced heat generation
ICRP
peak collector current
−2
A
• Reduced printed-circuit board area requirements.
RCEsat
equivalent on-resistance
<250
mΩ
• High collector current gain (hFE) at high IC
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
• Power management:
PIN
DESCRIPTION
– DC-DC converter
1
collector
– Supply line switching
2
collector
– Battery charger
3
base
– LCD back lighting.
4
emitter
5
collector
6
collector
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps,
LEDs)
– Inductive load drivers (e.g. relay, buzzers and
motors).
handbook, halfpage
6
5
4
1, 2, 5, 6
DESCRIPTION
3
PNP transistor providing low VCEsat and high current
capability in a SOT666 plastic package.
NPN complement: PBSS4240V.
4
1
MARKING
TYPE NUMBER
PBSS5240V
2003 Jan 30
Top view
MARKING CODE
2
3
MAM446
Fig.1 Simplified outline (SOT666) and symbol.
52
2
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
note 1
−
−1.8
A
ICRP
peak repetitive collector current
note 2
−
−2
A
ICM
peak collector current
−
−3
A
IB
base current (DC)
−
−300
mA
IBM
peak base current
−
−1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 3
−
300
mW
Tamb ≤ 25 °C; note 4
−
500
mW
Tamb ≤ 25 °C; note 1
−
900
mW
Tamb ≤ 25 °C; notes 2 and 3
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
note 1
410
K/W
note 2
215
K/W
note 3
140
K/W
notes 1 and 4
110
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
3. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
The only recommended soldering method is reflow soldering.
2003 Jan 30
3
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −40 V; IE = 0
−
−
−100
nA
VCB = −40 V; IE = 0; Tamb = 150 °C
−
−
−50
μA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB = 0
−
−
−100
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
nA
hFE
DC current gain
VCE = −5 V; IC = −1 mA
300
−
−
VCE = −5 V; IC = −100 mA
300
−
800
VCE = −5 V; IC = −500 mA
250
−
−
VCE = −5 V; IC = −1 A
160
−
−
VCE = −5 V; IC = −2 A; note 1
50
−
−
IC = −100 mA; IB = −1 mA
−
−80
−120
mV
IC = −500 mA; IB = −50 mA
−
−100
−145
mV
IC = −1 A; IB = −100 mA; note 1
−
−180
−250
mV
IC = −2 A; IB = −200 mA
−
−370
−530
mV
VCEsat
collector-emitter saturation voltage
RCEsat
equivalent on-resistance
IC = −1 A; IB = −100 mA; note 1
−
180
<250
mΩ
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −100 mA
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−
−1
V
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
12
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Jan 30
4
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
MHC464
1000
MHC465
−1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
800
(1)
(1)
−0.8
(2)
600
(3)
(2)
400
−0.4
(3)
200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MHC466
−103
handbook, halfpage
−10
−102
−103
−104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC467
−1.2
handbook, halfpage
VBEsat
(V)
VCEsat
(mV)
−1
−102
(1)
−0.8
(1)
(2)
(2)
−0.6
(3)
−10
(3)
−0.4
−1
−10−1
−1
−10
−102
−0.2
−10−1
−103
−104
IC (mA)
IC/IB = 20.
−1
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Jan 30
5
−10
−102
−103
−104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
MHC468
−1.2
MHC469
−2.4
IC
(A)
−2
handbook, halfpage
handbook, halfpage
IC
(A)
(4)
(3)
−0.8
(2)
(1)
(1)
(2)
(3)
(4)
(5)
−1.6
(5)
(6)
(7)
(8)
(6)
(7)
−1.2
(9)
(8)
−0.4
−0.8
(9)
(10)
0
−0.4
0
−0.8
−1.2
−0.4
0
−1.4
−2
VCE (V)
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
(1)
(2)
(3)
(4)
Collector current as a function of
collector-emitter voltage; typical values.
RCEsat
(Ω)
102
10
(1)
(2)
1
(3)
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
Fig.8
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Jan 30
IB = −50 mA.
IB = −45 mA.
IB = −40 mA.
IB = −35 mA.
Fig.7
MHC470
103
handbook, halfpage
10−1
−10−1
−0.8
−1.2
−1.6
−2
VCE (V)
Tamb = 25 °C.
IB = −7 mA.
IB = −6.3 mA.
IB = −5.6 mA.
IB = −4.9 mA.
Fig.6
−0.4
0
Tamb = 25 °C.
(1)
(2)
(3)
(4)
(10)
6
(5) IB = −30 mA.
(6) IB = −25 mA.
(7) IB = −20 mA.
(8) IB = −15 mA.
(9) IB = −10 mA.
(10) IB = −5 mA.
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2003 Jan 30
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240V
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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products are sold subject to the general terms and
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Jan 30
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp9
Date of release: 2003 Jan 30
Document order number: 9397 750 10781
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