Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D087
PBSS5540Z
40 V low VCEsat PNP transistor
Product data sheet
Supersedes data of 2001 Jan 26
2001 Sep 21
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
emitter-collector voltage
−40
V
IC
collector current (DC)
−5
A
ICM
peak collector current
−10
A
RCEsat
equivalent on-resistance
<80
mΩ
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• Supply line switching circuits
PARAMETER
PIN
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers)
• MOSFET driver applications.
DESCRIPTION
DESCRIPTION
1
base
2
collector
3
emitter
4
collector
4
handbook, halfpage
2, 4
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z.
1
MARKING
PBSS5540Z
UNIT
PINNING
• Battery management applications
TYPE NUMBER
MAX
3
1
MARKING CODE
Top view
PB5540
2
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
2001 Sep 21
2
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−5
A
ICM
peak collector current
−
−10
A
IBM
peak base current
−
−2
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
1.35
W
Tamb ≤ 25 °C; note 2
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
UNIT
92
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2001 Sep 21
3
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −30 V; IE = 0
−
−
−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −500 mA
250
350
−
VCE = −2 V; IC = −1 A; note 1
200
300
−
VCE = −2 V; IC = −2 A; note 1
150
250
−
VCE = −2 V; IC = −5 A; note 1
50
150
−
IC = −500 mA; IB = −5 mA
−
−80
−120
mV
IC = −1 A; IB = −10 mA
−
−120
−170
mV
VCEsat
collector-emitter saturation voltage
IC = −2 A; IB = −200 mA
−
−110
−160
mV
RCEsat
equivalent on-resistance
IC = −2 A; IB = −200 mA; note 1
−
<55
<80
mΩ
VCEsat
collector-emitter saturation voltage
IC = −5 A; IB = −500 mA
−
−250
−375
mV
VBEsat
base-emitter saturation voltage
IC = −5 A; IB = −500 mA
−
−
−1.3
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −2 A
−
−0.8
−1.25
V
fT
transition frequency
IC = −100 mA; VCE = −10 V;
f = 100 MHz
60
120
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
90
105
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Sep 21
4
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
MGU391
1000
MGU393
−1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
800
(1)
−0.8
(1)
600
(2)
400
(2)
200
(3)
−0.4
(3)
0
−1
−10
−102
−103
0
−10−1
−104
IC (mA)
−1
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = −55 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MGU395
−103
handbook, halfpage
−10
−102
−103
−104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MGU394
−1.2
handbook, halfpage
VCEsat
(mV)
VBEsat
(V)
−102
−0.8
(1)
(2)
(1)
(2)
(3)
(3)
−10
−1
−10−1
−1
−10
−102
−0.4
0
−10−1
−103
−104
IC (mA)
IC/IB = 20.
−1
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 21
5
−10
−102
−103
−104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
MGU392
−10
IC
(A)
handbook, halfpage
(1)
RCEsat
(Ω)
(3)
(4)
(5)
(6)
−8
MGU396
103
handbook, halfpage
(2)
102
(7)
(8)
−6
10
(9)
−4
(1)
(10)
(2)
1
(3)
−2
0
−0.4
0
−0.8
−1.2
10−1
−10−1
−2
−1.6
VCE (V)
IB = −150 mA.
IB = −135 mA.
IB = −120 mA.
IB = −105 mA.
(5)
(6)
(7)
(8)
IB = −90 mA.
IB = −75 mA.
IB = −60 mA.
IB = −45 mA.
Collector current as a function of
collector-emitter voltage; typical values.
2001 Sep 21
−102
−103
−104
IC (mA)
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(9) IB = −30 mA.
(10) IB = −15 mA.
Fig.7
Fig.6
−10
IC/IB = 20.
Tamb = 25 °C.
(1)
(2)
(3)
(4)
−1
6
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
2001 Sep 21
REFERENCES
IEC
JEDEC
EIAJ
SC-73
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5540Z
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Sep 21
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp9
Date of release: 2001 Sep 21
Document order number: 9397 750 08434
Similar pages