Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
MMBF170
Power MOSFET
0.5A, 60V N-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
„
DESCRIPTION
The UTC MMBF170 is an N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON), low input capacitance, low gate threshold voltage
and high switching speed.
„
FEATURES
* RDS(ON)<5mΩ @ VGS=10V,ID=0.2A
* High Switching Speed
* Low Input Capacitance(typical 22pF)
„
SYMBOL
3.Drain
2.Gate
1.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBF170L-AE2-R
MMBF170G-AE2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
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QW-R502-629.a
MMBF170
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
„
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Continuous
±20
V
Gate-Source Voltage
VGSS
Pulsed
±40
V
Drain-Gate Voltage RGS ≤1.0MΩ
VDGR
60
V
Continuous
ID
500
mA
Drain Current (Note 2)
Pulsed
IDM
800
mA
Power Dissipation (Note 2)
225
mW
PD
Derating above TA=25°C (Note 2)
1.80
mW/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Valid provided that terminals are kept at specified ambient temperature.
„
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
Junction to Ambient
„
RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
SYMBOL
Static Drain-Source On-State Resistance
RDS(ON)
BVDSS
IDSS
IGSS
VGS(TH)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-OFF Delay Time
tD(OFF)
Notes: 1. Pulse width ≤300µs, duty cycle ≤2%.
TEST CONDITIONS
MIN TYP MAX UNIT
ID=100µA, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS=+15V
VDS=0V, VGS=-15V
60
VDS=VGS, ID=-250µA
VGS=10V, ID=200mA
VGS=4.5V, ID=50mA
VDS=10V, ID=0.2A
0.8
VGS=0V, VDS=10V, f=1.0MHz
VDD=25V, ID=0.5A, VGS=10V,
RGEN=50Ω
70
V
µA
nA
nA
1.0
+10
-10
2.1
3.0
5.0
5.3
80
V
Ω
mS
22
11
2.0
40
30
5.0
pF
pF
pF
10
10
ns
ns
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-629.a
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