Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS4540X
40 V, 5 A
NPN low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2004 Jun 11
2004 Nov 04
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
FEATURES
QUICK REFERENCE DATA
• High hFE and low VCEsat at high current operation
SYMBOL
• High collector current capability: IC maximum 4 A
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
4
A
ICM
peak collector current
10
A
RCEsat
equivalent on-resistance
71
mΩ
• High efficiency leading to less heat generation.
APPLICATIONS
PARAMETER
MAX.
UNIT
• Medium power peripheral drivers (e.g. fan and motor)
• Strobe flash units for DSC and mobile phones
PINNING
• Inverter applications (e.g. TFT displays)
PIN
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
1
emitter
2
collector
3
base
DESCRIPTION
NPN low VCEsat transistor in a medium power SOT89
(SC-62) package.
PNP complement: PBSS5540X.
2
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
PBSS4540X
sym042
3
*1B
2
1
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS4540X
2004 Nov 04
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
4
A
ICRM
maximum repetitive collector current
notes 1 and 2
−
5
A
ICM
peak collector current
tp ≤ 1 ms
−
10
A
IB
base current (DC)
−
1
A
IBM
peak base current
tp ≤ 1 ms
−
2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
notes 1 and 2
−
2.5
W
note 2
−
0.55
W
note 3
−
1
W
note 4
−
1.4
W
note 5
−
1.6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Nov 04
3
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
001aaa229
1600
(1)
Ptot
(mW)
1200
(2)
800
(3)
400
0
−50
0
50
100
150
200
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4; standard footprint.
Fig.2
Power derating curves.
2004 Nov 04
4
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
from junction to ambient
Rth(j-s)
VALUE
UNIT
notes 1 and 2
50
K/W
note 2
225
K/W
note 3
125
K/W
note 4
90
K/W
note 5
80
K/W
16
K/W
in free air
from junction to soldering point
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
006aaa232
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
1
10−1
10−5
(10)
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
006aaa233
103
Zth
(K/W)
(1)
102
(2)
(3)
(5)
(4)
(6)
10
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa234
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
10
(5)
(6)
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
6
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector-base cut-off
current
VCB = 30 V; IE = 0 A
−
−
100
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
−
−
50
μA
ICES
collector-emitter cut-off
current
VCE = 30 V; VBE = 0 V
−
−
0.1
μA
IEBO
emitter-base cut-off current VEB = 5 V; IC = 0 A
−
−
100
nA
hFE
DC current gain
VCE = 2 V; IC = 0.5 A
300
−
−
VCE = 2 V; IC = 1 A; note 1
300
−
−
VCE = 2 V; IC = 2 A; note 1
250
−
−
VCE = 2 V; IC = 5 A; note 1
100
−
−
−
−
90
mV
ICBO
VCEsat
collector-emitter saturation IC = 0.5 A; IB = 5 mA
voltage
IC = 1 A; IB = 10 mA
−
−
120
mV
IC = 2 A; IB = 200 mA; note 1
−
−
150
mV
IC = 4 A; IB = 200 mA; note 1
−
−
290
mV
IC = 5 A; IB = 500 mA; note 1
−
−
355
mV
RCEsat
equivalent on-resistance
IC = 5 A; IB = 500 mA; note 1
−
40
71
mΩ
VBEsat
base-emitter saturation
voltage
IC = 4 A; IB = 200 mA; note 1
−
−
1.1
V
IC = 5 A; IB = 500 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A
−
−
1.1
V
fT
transition frequency
VCE = 10 V; IC = 0.1 A;
f = 100 MHz
70
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
−
−
75
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 04
7
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
001aaa223
800
hFE
001aaa222
1.2
(1)
VBE
(V)
600
(2)
0.8
(1)
(2)
400
(3)
(3)
0.4
200
0
10−1
1
10
102
0.0
10−1
103
104
IC (mA)
1
VCE = 2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
001aaa225
1
10
102
Base-emitter voltage as a function of
collector current; typical values.
001aaa997
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
103
104
IC (mA)
(1)
(1)
(2)
10−2
(2)
10−2
(3)
(3)
10−3
10−1
1
10
102
10−3
10−1
103
104
IC (mA)
(3) Tamb = −55 °C.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig.8
Fig.9
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 04
8
1
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
001aaa227
10
001aaa224
102
RCEsat
(Ω)
VBEsat
(V)
1
10
1
(1)
(2)
(3)
10−1
(1)
(2)
(3)
10−1
10−1
1
10
102
10−2
10−1
103
104
IC (mA)
1
102
10
103
104
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
001aaa973
103
001aaa221
10
RCEsat
(Ω)
IC
(A)
102
8
(1)
(1)
6
10
(2)
(2)
(3)
1
(3)
4
(4)
(5)
10−1
10−2
10−1
2
1
10
102
0
103
104
IC (mA)
0
(2) IC/IB = 50.
(1) IB = 25 mA.
(2) IB = 20 mA.
(3) IC/IB = 10.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
2004 Nov 04
1
1.5
2
VCE (V)
Tamb = 25 °C.
(1) IC/IB = 100.
0.5
(3) IB = 15 mA.
(4) IB = 10 mA.
(5) IB = 5 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
9
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
Reference mounting conditions
32 mm
32 mm
10 mm
2.5 mm
40
mm
40
mm
1 mm
10 mm
3 mm
2.5 mm
2.5 mm
1 mm
1 mm
0.5 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
001aab105
001aaa234
Fig.15 FR4, mounting pad for collector 1 cm2.
Fig.14 FR4, standard footprint.
32 mm
30 mm
20
mm
40
mm
2.5 mm
1 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 04
10
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 04
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
11
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 04
12
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/03/pp13
Date of release: 2004 Nov 04
Document order number: 9397 750 13885
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