Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PBSS4140DPN
40 V low VCEsat NPN/PNP
transistor
Product data sheet
2001 Dec 13
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
FEATURES
PBSS4140DPN
QUICK REFERENCE DATA
• 600 mW total power dissipation
SYMBOL
• Low collector-emitter saturation voltage
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
peak collector current
1
A
• Improved device reliability due to reduced heat
generation
ICM
peak collector current
2
A
• Replaces two SOT23 packaged low VCEsat transistors
on same PCB area
TR1
NPN
−
−
TR2
PNP
−
−
RCEsat
equivalent on-resistance
<500
mΩ
• High current capability
• Reduces required PCB area
• Reduced pick and place costs.
PINNING
PIN
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
handbook, halfpage
5
6
4
5
4
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457)
plastic package.
TR1
1
MARKING
TYPE NUMBER
PBSS4140DPN
2001 Dec 13
Top view
2
3
1
2
3
MAM445
MARKING CODE
Fig.1
M2
2
Simplified outline SC74 (SOT457) and
symbol.
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IBM
peak base current
−
1
A
Ptot
total power dissipation
−
370
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
600
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
UNIT
208
K/W
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2001 Dec 13
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCB = 40 V; IE = 0
−
−
100
nA
VCB = 40 V; IE = 0; Tj = 150 °C
−
−
50
μA
VCE = 30 V; IB = 0
−
−
100
nA
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCEsat
collector-emitter saturation
voltage
IC = 100 mA; IB = 1 mA
−
−
200
mV
IC = 500 mA; IB = 50 mA
−
−
250
mV
IC = 1 A; IB = 100 mA
−
−
500
mV
VCE = 5 V; IC = 500 mA
300
−
900
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
NPN transistor
hFE
DC current gain
VCE = 5 V; IC = 1 A
200
−
−
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
260
<500
mΩ
fT
transition frequency
VCE =10 V; IC = 50 mA; f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
VCE = −5 V; IC = −100 mA
300
−
800
VCE = −5 V; IC = −500 mA
250
−
−
PNP transistor
hFE
DC current gain
VCE = −5 V; IC = −1 A
160
−
−
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −50 mA
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−
−1.0
V
RCEsat
equivalent on-resistance
IC = −500 mA; IB −50 mA; note 1
−
300
<500
mΩ
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f =1 MHz
−
−
12
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Dec 13
4
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD642
1000
MLD635
10
handbook, halfpage
handbook, halfpage
hFE
800
VBE
(1)
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
0
10−1
1
102
10
10−1
10−1
103
104
IC (mA)
1
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD636
103
handbook, halfpage
10
102
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC126
102
handbook, halfpage
RCEsat
(Ω)
VCEsat
(mV)
(1)
102
10
(2)
(3)
10
1
(1)
(2)
(3)
1
1
10
102
103
IC (mA)
10−1
10−1
104
1
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
102
103
104
IC (mA)
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Dec 13
10
5
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD637
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
1000
800
IC (mA)
TR1 (NPN); VCE = 10 V.
Fig.6
Transition frequency as a function of
collector current; typical values.
2001 Dec 13
6
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD638
1200
MLD639
−10
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
(1)
800
−1
(1)
(2)
(2)
400
(3)
(3)
0
10−1
−1
−102
−10
−103
−10−1
−10−1
−104
IC (mA)
−1
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.7
Fig.8
DC current gain as a function of collector
current; typical values.
MLD640
−103
handbook, halfpage
−10
−102
−103
−104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC127
102
handbook, halfpage
RCEsat
(Ω)
VCEsat
(mV)
(1)
−102
10
(3)
(2)
−10
1
(1)
(2)
(3)
−1
−1
−10
−102
−103
IC (mA)
10−1
−10−1
−104
TR2 (PNP); IC/IB = 10.
−102
−103
−104
IC (mA)
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Dec 13
−10
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.9
−1
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
7
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD641
300
handbook, halfpage
fT
(MHz)
200
100
0
0
−200
−400
−600
−800
−1000
IC (mA)
TR2 (PNP); VCE = -10 V.
Fig.11 Transition frequency as a function of
collector current; typical values.
2001 Dec 13
8
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2001 Dec 13
REFERENCES
IEC
JEDEC
EIAJ
SC-74
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Dec 13
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp11
Date of release: 2001 Dec 13
Document order number: 9397 750 09062
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