UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50N05 Power MOSFET 50A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT50N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT50N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc. FEATURES * RDS(ON)=18mΩ @ VGS=10V,ID=20A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 30nC) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT50N05L-TN3-R UTT50N05G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 3 QW-R502-663.a UTT50N05 Preliminary Power MOSFE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Continuous ID 50 A Drain Current 200 A Pulsed IDM Single Pulsed EAS 400 mJ Avalanche Energy Repetitive EAR 100 mJ Power Dissipation PD 113 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 100 1.1 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=30V, ID=50A, Gate to Source Charge QGS IG=3.33mA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=15A, RG=2.5Ω, VGS=10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=50A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 50 10 +100 -100 V µA nA nA 18 4 23 V mΩ 900 430 80 1220 550 100 pF pF pF 30 9.6 10 40 100 90 80 40 60 200 180 160 nC nC nC ns ns ns ns 1.5 A A V 2 50 200 2 of 3 QW-R502-663.a UTT50N05 Preliminary Power MOSFE UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-663.a