UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P04 Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P04 is suitable for motor drivers, high-side switch and 12V board net, etc. SOP-8 FEATURES * RDS(ON) < 0.0105Ω @ VGS=-10V, ID=-30A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT50P04L-TN3-R UTT50P04G-TN3-R UTT50P04G-S08-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-252 SOP-8 1 G S Pin Assignment 2 3 4 5 6 7 D S - - S S G D D D Packing 8 - Tape Reel D Tape Reel 1 of 7 QW-R502-598.b UTT50P04 Preliminary Power MOSFET MARKING TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOP-8 2 of 7 QW-R502-598.b UTT50P04 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -40 V ±20 V Continuous (Note 2) -60 (Note 3) A Drain Current -100 A Pulsed Continuous Source Current (Diode Conduction) -60 (Note 3) A Avalanche Current -40 A Avalanche Energy 80 mJ TO-252 78 W Power Dissipation (Note 2) PD SOP-8 4.5 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM IS IAR EAS THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS 110 100 1.6 27.8 TO-252 θJA SOP-8 TO-252 Junction to Case θJC SOP-8 Notes: 1. Surface Mounted on 1”x1” FR4 Board. 2. See SOA curve for voltage derating. 3. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50A. Junction to Ambient (Note 1) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R502-598.b UTT50P04 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=-40V, VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-State Resistance VGS=-10V, ID=-30A RDS(ON) (Note 1) VGS=−4.5V, ID=−20A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS Output Capacitance COSS VDS=-25V, VGS=0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge (Note 3) QG VGS=-10V, VDS=-20V, ID=-50A Gate to Source Charge (Note 3) QGS Gate to Drain Charge (Note 3) QGD Turn-ON Delay Time (Note 3) tD(ON) VDD=-20V, VGEN=-10V, ID≈-50A, Rise Time (Note 3) tR Turn-OFF Delay Time (Note 3) tD(OFF) RL=0.4 Ω , RG=2.5Ω Fall-Time (Note 3) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IF=-50A, VGS=0V (Note 1) Body Diode Reverse Recovery Time trr IF=-50A, dIF/dt=100A/µs Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. 3. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 +100 -100 V µA nA nA -40 -1.0 -3.0 0.013 0.022 V Ω 3120 440 320 pF pF pF 63 13 16 15 18 60 47 nC nC nC ns ns ns ns 36 -100 A -1.5 V ns 4 of 7 QW-R502-598.b UTT50P04 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-598.b UTT50P04 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-598.b UTT50P04 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-598.b