UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * VDS= -100V * ID = -50A * RDS(ON) < 60mΩ @ VGS= -10V, ID= -20A * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT50P10L-TA3-T UTT50P10G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-607.b UTT50P10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Gate-Source Voltage SYMBOL RATINGS UNIT VGSS ±20 V Continuous ID -50 A Drain Current -90 A Pulsed IDM Power Dissipation PD 225 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJC Junction to Case RATINGS 0.55 UNIT °C/W ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS TYP ID=-250µA, VGS=0V -100 VDS=0.8×Max.rating, VGS=0V, TJ=25°C VDS=0.8×Max.rating, VGS=0V, TJ=125°C VGS=+20V VGS=-20V Gate- Source Leakage Forward IGSS Current Reverse ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-State VGS=-10V, ID=-20A RDS(ON) Resistance VGS=-4.5V, ID=-15A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-50V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=-50V, VGS=-10V, ID=-50A, RG=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS IF=-20A, VGS=0V, Pulse test, t≤300μs, Drain-Source Diode Forward Voltage VSD duty cycle d≤2% TJ=25°C, IF=-20A, VR=-50V, Body Diode Reverse Recovery Time tRR di/dt=-100A/µs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN MAX UNIT V -1 -500 +100 -100 -1 -3 60 65 4200 250 110 µA nA nA V mΩ mΩ pF pF pF 80 76 740 200 130 130 900 400 ns ns ns ns -1.0 -1.5 V 80 120 ns 2 of 3 QW-R502-607.b UTT50P10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-607.b