Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT60N05
Power MOSFET
60A, 50V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR
„
DESCRIPTION
The UTC UTT60N05 is an N-channel enhancement power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
The UTC UTT60N05 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.
„
FEATURES
* RDS(ON)=14mΩ @ VGS=10V,ID=20A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 39nC)
„
„
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT60N05L-TA3-T
UTT60N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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UTT60N05
„
Preliminary
Power MOSFE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
60
A
Drain Current
120
A
Pulsed
IDM
Single Pulsed
EAS
600
mJ
Avalanche Energy
Repetitive
EAR
150
mJ
Power Dissipation
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=50V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=30V, ID=60A,
Gate to Source Charge
QGS
IG=3.33mA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=15A, RG=4.7Ω,
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=60A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
50
2
14
1
+100
-100
V
µA
nA
nA
4
18
V
mΩ
2000
400
115
39
12
10
12
11
25
15
pF
pF
pF
60
30
30
50
30
nC
nC
nC
ns
ns
ns
ns
1.6
A
A
V
60
120
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UTT60N05
Preliminary
Power MOSFE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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