Datasheet

AOT10T60P/AOB10T60P/AOTF10T60P
600V,10A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
700V
IDM
40A
RDS(ON),max
< 0.7Ω
Applications
Qg,typ
26nC
Eoss @ 400V
3.5µJ
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer,
and Telecom
Top View
D
TO-263
D2PAK
TO-220F
TO-220
D
D
G
D
AOT10T60P
S
D
G
S
S
G
G
S
AOB10T60P
AOTF10T60P
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT10T60PL
AOB10T60PL
AOTF10T60P
AOTF10T60PL
TO-220 Green
TO-263 Green
TO-220F Pb Free
TO-220F Green
Tube
Tape & Reel
Tube
Tube
1000
800
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
TC=100°C
Pulsed Drain Current
Avalanche Current
C
AOT(B)10T60P AOTF10T60P
600
C
L=1mH
Repetitive avalanche energy
C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt J
TC=25°C
B
Power Dissipation
Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
±30
ID
10*
10*
6.6
6.6*
6.6*
40
Units
V
V
10
IDM
A
IAR
10
A
EAR
50
mJ
EAS
480
50
15
43
0.3
-55 to 150
mJ
dv/dt
208
1.7
PD
TJ, TSTG
TL
V/ns
33
0.26
300
Symbol
RθJA
AOT(B)10T60P AOTF10T60P
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.2.0: March 2014
AOTF10T60PL
W
W/°C
°C
°C
AOTF10T60PL
Units
65
65
65
°C/W
0.5
0.6
-2.9
-3.8
°C/W
°C/W
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Page 1 of 7
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
ID=250µA, VGS=0V
0.56
VDS=600V, VGS=0V
1
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
VGS=10V, ID=5A
gFS
Forward Transconductance
VDS=40V, ID=5A
8.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.74
IS
ISM
±100
nA
5
V
0.58
0.7
Ω
1
V
Maximum Body-Diode Continuous Current
10
A
Maximum Body-Diode Pulsed Current C
40
A
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
S
1595
pF
56
pF
42
pF
74
pF
VGS=0V, VDS=100V, f=1MHz
11
pF
f=1MHz
1.7
Ω
VGS=10V, VDS=480V, ID=10A
8.1
nC
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3
µA
4.3
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Co(tr)
V/ oC
VDS=480V, TJ=125°C
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS
VGS(th)
V
26
40
nC
Qgd
Gate Drain Charge
8.2
nC
tD(on)
Turn-On DelayTime
42
ns
tr
Turn-On Rise Time
54
ns
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=10A,
RG=25Ω
52
ns
tf
trr
24
ns
Body Diode Reverse Recovery Time
IF=10A,dI/dt=100A/µs,VDS=100V
497
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
7.3
ns
µC
Turn-Off Fall Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. ISD≤ID, di/dt≤200A/µs, VDD=400V, TJ≤TJ(MAX).
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2014
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Page 2 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
20
VDS=40V
10V
-55°C
16
10
7V
ID(A)
ID (A)
12
125°C
8
1
6.5V
4
VGS=5.5V
25°C
6V
0
0.1
0
5
10
15
20
25
30
2
4
Normalized On-Resistance
1.6
RDS(ON) (Ω)
8
10
3
2
1.2
VGS=10V
0.8
0.4
2.5
2
0
5
10
15
20
1
0.5
0
-100
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1E+01
1.1
1E+00
IS (A)
1E+02
0.8
1E-03
0
50
100
150
200
100
150
200
25°C
1E-04
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.2.0: March 2014
50
125°C
1E-02
-50
0
1E-01
0.9
0.7
-100
-50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.3
1
VGS=10V
ID=5A
1.5
0
BVDSS (Normalized)
6
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=480V
ID=10A
12
9
6
Coss
100
Crss
10
3
0
1
0
8
16
24
32
40
0.1
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
7.5
15
6
12
Current rating ID(A)
Eoss(uJ)
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
4.5
Eoss
3
1.5
0
9
6
3
0
0
100
200
300
400
500
600
VDS (Volts)
Figure 9: Coss stored Energy
Rev.2.0: March 2014
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note F)
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Page 4 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10µs
RDS(ON)
limited
10
10µs
RDS(ON)
limited
10
1
DC
1ms
10ms
0.1
100µs
ID (Amps)
ID (Amps)
100µs
1ms
1
10ms
DC
0.1s
0.1
TJ(Max)=150°C
TC=25°C
1s
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS(Volts)
Figure 11: Maximum Forward Biased Safe Operating
Area for TO-220/TO-263 (Note F)
1
10
100
1000
VDS(Volts)
Figure 12: Maximum Forward Biased Safe Operating
Area for TO-220F Pb Free (Note F)
100
10µs
RDS(ON)
limited
10
ID (Amps)
100µs
1
1ms
10ms
DC
0.1s
1s
0.1
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS(Volts)
Figure 13: Maximum Forward Biased Safe Operating
Area for TO-220F Green (Note F)
Rev.2.0: March 2014
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Page 5 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220/TO-263 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.8°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F)
Rev.2.0: March 2014
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Page 6 of 7
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: March 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7