AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description Product Summary The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V ID (at VGS=10V) 130A RDS(ON) (at VGS=10V) < 12mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D D G D D D S S D G G S G G AOT1100 Gate-Source Voltage VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C Units V ±20 V 92 A 208 IDM 8 IDSM TA=70°C Maximum 100 130 ID TC=100°C S S AOB1100 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G D Bottom View A 6 Avalanche Current C IAS 122 A Avalanche energy L=0.1mH C TC=25°C EAS 744 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Dec 2011 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 250 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 500 PD TC=100°C -55 to 175 Typ 12 48 0.22 www.aosmd.com °C Max 15 60 0.3 Units °C/W °C/W °C/W Page 1 of 6 AOT1100L/AOB1100L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µΑ 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 208 VGS=10V, ID=20A TO220 Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=50V, ID=20A 0.5 Units µA 5 IGSS RDS(ON) Max V VDS=100V, VGS=0V VGS(th) Coss Typ 100 nA 3.2 3.8 V 10 12 19 22 9.7 53 11.7 mΩ S 0.69 1 V 130 A A mΩ 4833 pF 721 pF 35 pF 1.1 1.7 Ω 82 100 nC Qgs Gate Source Charge 23 nC Qgd Gate Drain Charge 19 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 22 ns tD(off) Turn-Off DelayTime 50 ns tf Turn-Off Fall Time 4.5 ns ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 64 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 880 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Dec 2011 www.aosmd.com Page 2 of 6 AOT1100L/AOB1100L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 80 6V 60 ID (A) ID (A) 60 5V 40 20 40 20 VGS=4.5V 125°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 0 1 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 6 2.8 Normalized On-Resistance 14 12 RDS(ON) (mΩ Ω) 25°C VGS=10V 10 8 6 2.4 VGS=10V ID=20A 2.0 17 5 2 10 1.6 1.2 0.8 0 8 16 24 32 40 0 25 50 75 100 125 150 175 200 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 1E+02 24 ID=20A 1E+01 20 40 125°C 125°C 16 IS (A) RDS(ON) (mΩ Ω) 1E+00 1E-01 25°C 1E-02 12 1E-03 25°C 8 1E-04 4 1E-05 2.0 6.0 8.0 10.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: Dec 2011 4.0 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT1100L/AOB1100L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 100000 VDS=50V ID=20A 6 4 2 1000 Coss 100 Crss 10 0 1 0 15 30 45 60 75 Qg (nC) Figure 7: Gate-Charge Characteristics 90 0 1000.0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 9000 10.0 DC 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 7500 10µs 10µs 100µs RDS(ON) limited Power (W) 100.0 ID (Amps) Ciss 10000 Capacitance (pF) VGS (Volts) 8 6000 17 5 2 10 4500 3000 0.1 1500 TJ(Max)=175°C TC=25°C 0 0.0 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.0001 0.001 0.01 0.1 1 0 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to18 Case (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W 40 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 Rev0: Dec 2011 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 1 10 Page 4 of 6 AOT1100L/AOB1100L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 Power Dissipation (W) IAR (A) Peak Avalanche Current 160 120 TA=25°C TA=100°C TA=150°C 80 TA=125°C 40 400 300 200 100 0 0 1 0 10 100 1000 10000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°°C) Figure 13: Power De-rating (Note F) 175 10000 150 TA=25°C 120 1000 Power (W) Current rating ID(A) 500 90 60 17 5 2 10 100 10 30 0 1 0 25 50 75 100 125 150 175 TCASE (°°C) Figure 14: Current De-rating (Note F) 1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.0001 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 Rev0: Dec 2011 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) www.aosmd.com 100 1000 Page 5 of 6 AOT1100L/AOB1100L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0: Dec 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6