AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 12A RDS(ON) (at VGS=10V) < 0.72Ω 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-263 D2PAK TO-220F D G D S AOT12N65 G S D G S G AOTF12N65 S AOB12N65 Orderable Part Number Package Type Form Minimum Order Quantity AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Tube Tube Tube Tape & Reel 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT(B)12N65 Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOTF12N65 650 AOTF12N65L ±30 V 12 12* 12* 7.7 7.7* 7.7* IDM Units V A 48 Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 375 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS 750 30 5 50 mJ Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt PD TJ, TSTG TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.7.0: December 2014 278 2.2 0.4 -55 to 150 V/ns 40 W 0.3 W/ oC °C 300 °C AOT(B)12N65 65 AOTF12N65 65 AOTF12N65L 65 Units °C/W 0.5 0.45 -2.5 -3.1 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 12 A ISM Maximum Body-Diode Pulsed Current 48 A ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.72 o V/ C VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 3.9 4.5 nΑ V VGS=10V, ID=6A 0.57 0.72 Ω VDS=40V, ID=6A 17 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 µA 3 S 0.71 1430 1792 2150 pF VGS=0V, VDS=25V, f=1MHz 120 152 185 pF 9 11.5 18 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 32 39.8 48 nC VGS=10V, VDS=520V, ID=12A 7.5 9.2 11 nC 13.5 16.8 20 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 36 VGS=10V, VDS=325V, ID=12A, RG=25Ω IF=12A,dI/dt=100A/µs,VDS=100V ns 77 ns 120 ns 63 ns 300 375 450 6 7.5 9 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.0: December 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 24 100 10V 20 -55°C VDS=40V 6.5V 16 10 ID(A) ID (A) 6V 12 8 125°C 1 25°C VGS=5.5V 4 0.1 0 0 5 10 15 20 25 2 30 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 1.2 Normalized On-Resistance 3 1.0 RDS(ON) (Ω) 4 VGS=10V 0.8 0.6 0.4 0 5 10 15 20 2.5 2 VGS=10V ID=6A 1.5 1 0.5 0 -100 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 1.0E+01 1.0E+00 IS (A) BVDSS (Normalized) 125°C 1.1 1 1.0E-01 25°C 1.0E-02 2.2 1.0E-03 0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev.7.0: December 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 1000 Capacitance (pF) VGS (Volts) Ciss VDS=520V ID=12A 12 9 6 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 60 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 100 10µs RDS(ON) limited 1ms 1 DC 10ms RDS(ON) limited 10 100µs 10µs 100µs ID (Amps) 10 ID (Amps) 1 1ms 10ms 0.1s 1s 1 DC 0.1 0.1 10s TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1 1000 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N65 (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT(B)12N65 (Note F) 14 100 100µs 1ms 1 10ms 0.1s 1s DC 0.1 12 Current rating ID(A) 10 ID (Amps) 10µs RDS(ON) limited 10 8 6 4 10s TJ(Max)=150°C TC=25°C 2 0.01 0 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOTF12N65L (Note F) Rev.7.0: December 2014 www.aosmd.com 0 25 50 75 100 125 TCASE (°C) Figure 12: Current De-rating (Note B) 150 Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)12N65 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF12N65 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=3.1°C/W 0.1 PDM 0.01 Ton 0.001 T Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF12N65L (Note F) Rev.7.0: December 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.7.0: December 2014 Isd L + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6