Datasheet

AOT12N65/AOTF12N65/AOB12N65
650V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N65 & AOTF12N65 & AOB12N65 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
12A
RDS(ON) (at VGS=10V)
< 0.72Ω
100% UIS Tested
100% Rg Tested
Top View
TO-220
D
TO-263
D2PAK
TO-220F
D
G
D
S
AOT12N65
G
S
D
G
S
G
AOTF12N65
S
AOB12N65
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT12N65
AOTF12N65
AOTF12N65L
AOB12N65L
TO-220 Pb Free
TO-220F Pb Free
TO-220F Green
TO-263 Green
Tube
Tube
Tube
Tape & Reel
1000
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT(B)12N65
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
ID
AOTF12N65
650
AOTF12N65L
±30
V
12
12*
12*
7.7
7.7*
7.7*
IDM
Units
V
A
48
Avalanche Current C
IAR
5
A
Repetitive avalanche energy C
EAR
375
mJ
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
B
Power Dissipation
Derate above 25oC
EAS
750
30
5
50
mJ
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
dv/dt
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.7.0: December 2014
278
2.2
0.4
-55 to 150
V/ns
40
W
0.3
W/ oC
°C
300
°C
AOT(B)12N65
65
AOTF12N65
65
AOTF12N65L
65
Units
°C/W
0.5
0.45
-2.5
-3.1
°C/W
°C/W
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
650
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
12
A
ISM
Maximum Body-Diode Pulsed Current
48
A
ID=250µA, VGS=0V, TJ=150°C
750
V
ID=250µA, VGS=0V
0.72
o
V/ C
VDS=650V, VGS=0V
1
VDS=520V, TJ=125°C
10
3.9
4.5
nΑ
V
VGS=10V, ID=6A
0.57
0.72
Ω
VDS=40V, ID=6A
17
1
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
µA
3
S
0.71
1430
1792
2150
pF
VGS=0V, VDS=25V, f=1MHz
120
152
185
pF
9
11.5
18
pF
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
Ω
32
39.8
48
nC
VGS=10V, VDS=520V, ID=12A
7.5
9.2
11
nC
13.5
16.8
20
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
36
VGS=10V, VDS=325V, ID=12A,
RG=25Ω
IF=12A,dI/dt=100A/µs,VDS=100V
ns
77
ns
120
ns
63
ns
300
375
450
6
7.5
9
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.7.0: December 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
100
10V
20
-55°C
VDS=40V
6.5V
16
10
ID(A)
ID (A)
6V
12
8
125°C
1
25°C
VGS=5.5V
4
0.1
0
0
5
10
15
20
25
2
30
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
1.2
Normalized On-Resistance
3
1.0
RDS(ON) (Ω)
4
VGS=10V
0.8
0.6
0.4
0
5
10
15
20
2.5
2
VGS=10V
ID=6A
1.5
1
0.5
0
-100
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
1.2
1.0E+01
1.0E+00
IS (A)
BVDSS (Normalized)
125°C
1.1
1
1.0E-01
25°C
1.0E-02
2.2
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.7.0: December 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=520V
ID=12A
12
9
6
Coss
100
Crss
10
3
1
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
60
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
100
10µs
RDS(ON)
limited
1ms
1
DC
10ms
RDS(ON)
limited
10
100µs
10µs
100µs
ID (Amps)
10
ID (Amps)
1
1ms
10ms
0.1s
1s
1
DC
0.1
0.1
10s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1
1000
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N65 (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT(B)12N65 (Note F)
14
100
100µs
1ms
1
10ms
0.1s
1s
DC
0.1
12
Current rating ID(A)
10
ID (Amps)
10µs
RDS(ON)
limited
10
8
6
4
10s
TJ(Max)=150°C
TC=25°C
2
0.01
0
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe Operating
Area for AOTF12N65L (Note F)
Rev.7.0: December 2014
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0
25
50
75
100
125
TCASE (°C)
Figure 12: Current De-rating (Note B)
150
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)12N65 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF12N65 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3.1°C/W
0.1
PDM
0.01
Ton
0.001
T
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF12N65L (Note F)
Rev.7.0: December 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.7.0: December 2014
Isd
L
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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