Datasheet

AOT14N50FD/AOTF14N50FD
500V, 14A N-Channel MOSFET
General Description
Product Summary
The AOT14N50FD/AOTF14N50FD have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
14A
RDS(ON) (at VGS=10V)
< 0.47Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT14N50FDL & AOTF14N50FDL
Top View
TO-220F
TO-220
D
G
G
AOT14N50FD
D
S
AOTF14N50FD
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT14N50FD
AOTF14N50FD
Drain-Source Voltage
500
VDS
Gate-Source Voltage
Continuous Drain
Current
±30
VGS
TC=25°C
TC=100°C
V
14
ID
Units
V
14*
9.6
9.6*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
5
A
Repetitive avalanche energy C
EAR
375
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
dv/dt
750
5
mJ
V/ns
W
56
PD
50
0.4
TJ, TSTG
-55 to 150
W/ oC
°C
300
°C
TL
Symbol
RθJA
RθCS
AOT14N50FD
65
AOTF14N50FD
65
Units
°C/W
0.5
0.45
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev3: Jul 2011
278
2.2
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Page 1 of 6
AOT14N50FD/AOTF14N50FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=10mA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=10mA, VGS=0V, TJ=150°C
600
V
ID=10mA, VGS=0V
0.57
V/ oC
VDS=500V, VGS=0V
10
VDS=400V, TJ=125°C
100
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
2.4
3
4
nΑ
V
0.47
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7A
0.37
gFS
Forward Transconductance
VDS=40V, ID=7A
15
VSD
Diode Forward Voltage
IS=14A,VGS=0V
1.3
IS
ISM
S
1.6
V
Maximum Body-Diode Continuous Current
14
A
Maximum Body-Diode Pulsed Current
56
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
µA
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=400V, ID=14A
VGS=10V, VDS=250V, ID=14A,
RG=25Ω
1300
1654
2010
pF
120
179
235
pF
8
14.5
21
pF
1.7
3.4
5.1
Ω
30
38.8
47
nC
8.7
nC
17.5
nC
32
ns
94
ns
104
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=14A,dI/dt=100A/µs,VDS=100V
90
145
Qrr
Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V
0.3
0.5
78
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Jul 2011
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Page 2 of 6
AOT14N50FD/AOTF14N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
100
10V
25
20
10
6V
125°C
ID(A)
ID (A)
-55°C
VDS=40V
6.5V
15
10
1
VGS=5.5V
25°C
5
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
1.0
Normalized On-Resistance
RDS(ON) (Ω)
8
10
3
0.8
0.6
0.4
VGS=10V
0.2
2.5
0
5
10
15
20
25
VGS=10V
ID=7A
2
1.5
1
0.5
0.0
0
-100
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
1.0E+01
1.1
125°C
1.0E+00
IS (A)
BVDSS (Normalized)
6
VGS(Volts)
Figure 2: Transfer Characteristics
1
1.0E-01
1.0E-02
25°C
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev 3: Jul 2011
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0.0
0.4
0.8
1.2
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT14N50FD/AOTF14N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
Ciss
VGS (Volts)
12
Capacitance (pF)
VDS=400V
ID=14A
9
6
1000
Coss
100
Crss
10
3
1
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
60
100
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
RDS(ON)
limited
10
1ms
1
10ms
DC
0.1s
10µs
RDS(ON)
limited
10
100µs
ID (Amps)
ID (Amps)
1
100µs
1ms
1
10ms
DC
0.1s
1s
0.1
0.1
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT14N50FD (Note F)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF14N50FD (Note F)
Current rating ID(A)
15
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev 3: Jul 2011
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Page 4 of 6
AOT14N50FD/AOTF14N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT14N50FD (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF14N50FD (Note F)
15
AOT(F)14N50FD
10
VDS=100V
IF=14A
dI/dt=100A/µs
IF (A)
5
0
-5
-10
-15
-20
-600
Rev 3: Jul 2011
AOT(F)14N50
-300
0
300
Trr (nS)
Figure 14: Diode Recovery Characteristics
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600
900
1200
Page 5 of 6
AOT14N50FD/AOTF14N50FD
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 3: Jul 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6