Datasheet

AOT16N50/AOTF16N50
500V, 16A N-Channel MOSFET
General Description
Product Summary
The AOT16N50 & AOTF16N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
16A
RDS(ON) (at VGS=10V)
< 0.37Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT16N50L & AOTF16N50L
TO-220
G
D
Top View
D
G
S
TO-220F
G
D
S
AOT16N50
S
AOTF16N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT16N50
Drain-Source Voltage
VDS
500
Gate-Source Voltage
±30
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOTF16N50
V
16
ID
Units
V
16*
11
11*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
6
A
Repetitive avalanche energy C
EAR
540
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
dv/dt
1080
5
mJ
V/ns
W
64
PD
50.0
0.4
TJ, TSTG
-55 to 150
W/ oC
°C
300
°C
TL
Symbol
RθJA
RθCS
AOT16N50
65
AOTF16N50
65
Units
°C/W
0.5
0.45
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev3: Jul 2011
278
2.2
www.aosmd.com
Page 1 of 6
AOT16N50/AOTF16N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.5
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
3.3
µA
4
4.5
nΑ
V
0.37
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
0.29
gFS
Forward Transconductance
VDS=40V, ID=8A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
16
A
ISM
Maximum Body-Diode Pulsed Current
64
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1531
1914
2297
pF
153
191
229
pF
11
16
20
pF
VGS=0V, VDS=0V, f=1MHz
1.75
3.5
5.3
Ω
34
42.8
51
nC
VGS=10V, VDS=400V, ID=16A
7.5
9.3
11
nC
16
20.3
24
nC
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
S
0.71
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=16A,dI/dt=100A/µs,VDS=100V
265
334
400
Qrr
Body Diode Reverse Recovery Charge IF=16A,dI/dt=100A/µs,VDS=100V
4.5
6
7.5
VGS=10V, VDS=250V, ID=16A,
RG=25Ω
44
ns
84
ns
92
ns
50
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Jul 2011
www.aosmd.com
Page 2 of 6
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
32
100
10V
28
-55°C
VDS=40V
6.5V
24
10
6V
ID(A)
ID (A)
20
16
12
VGS=5.5V
125°C
1
8
25°C
4
0
0.1
5
10
15
20
25
VDS (Volts)
Fig 1: On-Region Characteristics
30
2
0.7
3
0.6
2.5
Normalized On-Resistance
RDS(ON) (Ω )
0
0.5
VGS=10V
0.4
0.3
0.2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
VGS=10V
ID=8A
2
1.5
1
0.5
0
0
4
8
12
16
20
24
28
32
-100
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
1.0E+00
40
125°C
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
1.0E-01
25°C
1.0E-02
1.0E-03
0.9
1.0E-04
1.0E-05
0.8
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev3: Jul 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=400V
ID=16A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
Crss
10
3
0
1
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0.1
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
10µs
100µs
1ms
1
10ms
0.1s
DC
0.1
RDS(ON)
limited
10
100µs
ID (Amps)
RDS(ON)
limited
10
ID (Amps)
100
1
DC
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
1ms
10ms
0.1s
1s
10s
0.01
0.01
1
10
100
1000
1
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT16N50 (Note F)
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF16N50 (Note F)
18
Current rating ID(A)
15
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev3: Jul 2011
www.aosmd.com
Page 4 of 6
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT16N50 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF16N50 (Note F)
Rev3: Jul 2011
www.aosmd.com
Page 5 of 6
AOT16N50/AOTF16N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev3: Jul 2011
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6