Datasheet

AOT1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOT1N60 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability these parts
can be adopted quickly into new and existing offline power
supply designs.
VDS
ID (at VGS=10V)
[email protected]
1.3A
RDS(ON) (at VGS=10V)
< 9Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT1N60L
Top View
D
TO-220
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
Maximum
600
Units
V
±30
V
1.3
ID
0.9
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
1
A
Repetitive avalanche energy C
EAR
15
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
dv/dt
30
5
41.7
mJ
V/ns
W
0.3
-55 to 150
W/ oC
°C
300
°C
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev4: July 2010
4
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
Typical
55
Maximum
65
Units
°C/W
2
0.5
3
°C/W
°C/W
RθJC
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Page 1 of 5
AOT1N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.6
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
100
Gate Threshold Voltage
VDS=5V ID=250µA
3
µA
4.1
4.5
nΑ
V
9
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.65A
7.5
gFS
Forward Transconductance
VDS=40V, ID=0.65A
0.9
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
S
IS
Maximum Body-Diode Continuous Current
1
A
ISM
Maximum Body-Diode Pulsed Current
4
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=1A
100
130
160
pF
11
14.5
17.5
pF
1.4
1.8
2.2
pF
2.8
3.5
5.3
Ω
6.1
8
nC
Qgs
Gate Source Charge
1.3
2
nC
Qgd
Gate Drain Charge
3.1
4
nC
tD(on)
Turn-On DelayTime
10
12
ns
tr
Turn-On Rise Time
6.7
8
ns
tD(off)
Turn-Off DelayTime
20
25
ns
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=300V, ID=1A,
RG=25Ω
IF=1A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=1A,dI/dt=100A/µs,VDS=100V
11.5
15
ns
114
137
0.63
0.76
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=1A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev4: July 2010
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Page 2 of 5
AOT1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
10
10V
-55°C
VDS=40V
6.5V
1.5
ID(A)
ID (A)
6V
1
125°C
1
VGS=5.5V
0.5
25°C
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
14.0
2.5
Normalized On-Resistance
13.0
RDS(ON) (Ω )
12.0
VGS=10V
11.0
10.0
9.0
8.0
VGS=10V
ID=0.65A
2
1.5
1
0.5
7.0
0
0.5
1
1.5
2
0
2.5
-100
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.2
40
125°C
1.0E-01
IS (A)
BVDSS (Normalized)
1.0E+00
1.1
1
1.0E-02
25°C
1.0E-03
0.9
1.0E-04
0.8
1.0E-05
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev4: July 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOT1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1000
VDS=480V
ID=1A
Ciss
Capacitance (pF)
VGS (Volts)
12
9
6
100
Coss
10
3
Crss
0
1
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0.1
10
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
2
10µs
ID (Amps)
1
100µs
1ms
0.1
DC
TJ(Max)=150°C
TC=25°C
10ms
1
Current rating ID(A)
RDS(ON)
limited
1
1
0
0
0.01
1
10
100
1000
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note B)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT1N60 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
Single Pulse
0.1
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT1N60 (Note F)
Rev4: July 2010
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Page 4 of 5
AOT1N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev4: July 2010
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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