Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4140T
40 V, 1A
NPN low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2005 Feb 14
2005 Feb 24
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
2
A
RCEsat
equivalent on-resistance
<500
mΩ
PINNING
• General purpose switching and muting
PIN
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5140T.
handbook, halfpage
3
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
PBSS4140T
1
ZT*
Top view
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
PBSS4140T
−
2005 Feb 24
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Tamb ≤ 25 °C; note 2
−
450
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction in free air; note 1
to ambient
in free air; note 2
TYPICAL
UNIT
417
K/W
278
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
2005 Feb 24
3
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector-base cut-off
current
VCB = 40 V; IE = 0 A
−
−
100
nA
VCB = 40 V; IE = 0 A; Tamb = 150 °C
−
−
50
μA
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0 A
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCE = 5 V; IC = 500 mA
300
−
900
VCE = 5 V; IC = 1 A
200
−
−
IC = 100 mA; IB = 1 mA
−
−
200
mV
IC = 500 mA; IB = 50 mA
−
−
250
mV
ICBO
VCEsat
collector-emitter saturation
voltage
IC = 1 A; IB = 100 mA
−
−
500
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
260
<500
mΩ
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0 A; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2005 Feb 24
4
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
MLD660
1000
MLD661
10
handbook, halfpage
handbook, halfpage
hFE
800
VBE
(1)
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
0
10−1
1
102
10
10−1
10−1
103
104
IC (mA)
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD662
103
handbook, halfpage
10
102
Base-emitter voltage as a function of
collector current; typical values.
mld663
102
VCEsat
103
104
IC (mA)
RCEsat
(Ω)
(mV)
(1)
102
10
(2)
(3)
10
(1)
1
(2)
(3)
1
1
10
102
103
IC (mA)
10−1
10−1
104
IC/IB = 10.
1
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2005 Feb 24
5
10
102
103
104
IC (mA)
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
MLD664
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
1000
800
IC (mA)
VCE = 10 V.
Fig.6
Transition frequency as a function of
collector current.
2005 Feb 24
6
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2005 Feb 24
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product data sheet
40 V, 1A
NPN low VCEsat (BISS) transistor
PBSS4140T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 Feb 24
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/05/pp9
Date of release: 2005 Feb 24
Document order number: 9397 750 14742