PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features n n n n Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation 1.3 Applications n n n n General-purpose switching and muting LCD backlighting Supply line switching circuits Battery-driven equipment (mobile phones, video cameras and handheld devices) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Min [1] Typ Max Unit - - −40 V - - −1 A - - −2 A - 300 < 500 mΩ PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 006aab259 3. Ordering information Table 3. Ordering information Type number PBSS5140T Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS5140T *2H [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −5 V IC collector current - −1 A ICM peak collector current single pulse; tp ≤ 1 ms - −2 A IBM peak base current single pulse; tp ≤ 1 ms - −1 A PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 2 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Ptot total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 300 mW [2] - 450 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aab308 1 Ptot (W) 0.75 0.5 (1) (2) 0.25 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Typ Max Unit [1] - - 417 K/W [2] - - 278 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PBSS5140T_4 Product data sheet Min © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 3 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 006aab309 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab310 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.01 0.02 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 4 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −40 V; IE = 0 A - - −100 nA VCB = −40 V; IE = 0 A; Tj = 150 °C - - −50 µA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −5 V; IC = −1 mA 300 - - VCE = −5 V; IC = −100 mA VCEsat collector-emitter saturation voltage 300 - 800 VCE = −5 V; IC = −500 mA [1] 250 - - VCE = −5 V; IC = −1 A [1] 160 - - IC = −100 mA; IB = −1 mA - - −200 mV IC = −500 mA; IB = −50 mA [1] - - −250 mV mV IC = −1 A; IB = −100 mA [1] - - −500 RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 300 < 500 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA [1] - - −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A - - −1 V td delay time VCC = −10 V; IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA - 10 - ns - 31 - ns - 41 - ns tr rise time ton turn-on time ts storage time - 195 - ns tf fall time - 65 - ns toff turn-off time - 260 - ns fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 - - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 12 pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 5 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 006aab311 1000 006aab312 −2 hFE IB (mA) = −60 IC (A) 800 −42 −54 −36 −48 −1.5 (1) −30 −24 −18 600 (2) −12 −1 −6 400 (3) −0.5 200 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −5 V −0.4 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values 006aab313 −1.2 Fig 5. Collector current as a function of collector-emitter voltage; typical values 006aab314 −1.3 VBE (V) VBEsat (V) (1) −0.8 −0.9 (1) (2) (2) (3) (3) −0.4 −0.5 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.1 −10−1 VCE = −5 V −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig 7. −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values PBSS5140T_4 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 6. −10 © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 6 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 006aab315 −1 006aab316 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (3) (1) (2) −10−2 −10−2 −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) (3) −10−3 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 8. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aab317 103 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) RCEsat (Ω) 102 102 10 006aab318 103 10 (1) (2) (3) (1) (2) 1 1 (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5140T_4 Product data sheet −10 © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 7 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA Fig 13. Test circuit for switching times PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 8 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 14. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS5140T [1] Package SOT23 Description 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. PBSS5140T_4 Product data sheet Packing quantity © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 9 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 15. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 16. Wave soldering footprint SOT23 (TO-236AB) PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 10 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5140T_4 20080729 Product data sheet - PBSS5140T_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Table 4 “Marking codes”: marking code corrected Table 5 “Limiting values”: conditions added for ICM and IBM Figure 1, 2 and 3: added Table 7: RCEsat redefined to collector-emitter saturation resistance Figure 4, 6, 8 and 10: updated Figure 5, 7, 9 and 11: added Section 8 “Test information”: added Figure 14: superseded by minimized package outline drawing Section 11 “Soldering”: added Section 13 “Legal information”: updated PBSS5140T_3 20040107 Product specification - PBSS5140T_2 PBSS5140T_2 20010720 Product specification - PBSS5140T_1 PBSS5140T_1 20001116 Product specification - - PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 11 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS5140T_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 29 July 2008 12 of 13 PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 July 2008 Document identifier: PBSS5140T_4