Datasheet

AOT2606L/AOB2606L/AOTF2606L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2606L & AOB2606L & AOTF2606L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
60V
72A
RDS(ON) (at VGS=10V)
< 6.5mΩ (< 6.2mΩ∗)
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
AOT2606L
D
S
AOTF2606L
G
D
S
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
38
A
260
13
IDSM
TA=70°C
Units
V
54
56
IDM
TA=25°C
AOTF2606L
G
±20
72
ID
TC=100°C
C
S
AOB2606L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT2606L/AOB2606L
VDS
Drain-Source Voltage
60
Gate-Source Voltage
S
A
10
Avalanche Current C
IAS
60
A
Avalanche energy L=0.1mH C
EAS
180
mJ
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
36.5
18
2.1
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
115
57.5
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
TJ, TSTG
RθJA
RθJC
-55 to 175
AOT2606L/AOB2606L
15
60
1.3
W
°C
AOTF2606L
15
60
4.1
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev 1 : Mar. 2012
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Page 1 of 7
AOT2606L/AOB2606L/AOTF2606L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
260
VGS=10V, ID=20A
TJ=125°C
VGS=10V, ID=20A
gFS
Forward Transconductance
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
µA
5
IGSS
TO220/TO220F
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=30V, f=1MHz
±100
nA
3
3.5
V
5.4
6.5
8.5
10.5
5.1
6.2
mΩ
1
V
72
A
A
75
0.7
mΩ
S
4050
pF
345
pF
16.8
pF
0.65
1.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
53
75
nC
Qg(4.5V) Total Gate Charge
22
31
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
0.3
17
nC
Qgd
Gate Drain Charge
5
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
33
ns
4
ns
IF=20A, dI/dt=500A/µs
26
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
125
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Mar. 2012
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Page 2 of 7
AOT2606L/AOB2606L/AOTF2606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
6V
100
80
5V
80
ID(A)
ID (A)
60
60
40
40
125°C
4.5V
20
20
25°C
Vgs=4V
0
0
0
1
2
3
4
2
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
Normalized On-Resistance
2
8
RDS(ON) (mΩ
Ω)
3
VGS=10V
6
4
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
14
1.0E+02
ID=20A
1.0E+01
12
40
1.0E+00
8
IS (A)
RDS(ON) (mΩ
Ω)
10
125°C
125°C
1.0E-01
1.0E-02
6
25°C
1.0E-03
4
1.0E-04
25°C
1.0E-05
2
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : Mar. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOT2606L/AOB2606L/AOTF2606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=30V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2000
Coss
2
1000
0
0
Crss
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0
60
1000
1000.0
10µs
10µs
100µs
RDS(ON)
10.0
1ms
10ms
1.0
DC
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
800
Power (W)
100.0
ID (Amps)
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
17
5
2
10
600
400
200
0.0
0
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2606L and AOB2606L (Note F)
0.0001
0.001
0.01
0.1
1
10
0
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT2606L and AOB2606L (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.3°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2606L and AOB2606L (Note F)
Rev 1 : Mar. 2012
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Page 4 of 7
AOT2606L/AOB2606L/AOTF2606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
1000.0
10µs
RDS(ON)
800
100µs
10.0
Power (W)
ID (Amps)
100.0
1ms
10ms
1.0
DC
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
600
400
200
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
10
100
17
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
5
for AOTF2606L (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2606L
2
10
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4.1°C/W
0
18
0.1
PD
Single Pulse
0.01
Ton
0.001
1E-05
T
40
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2606L (Note F)
Rev 1 : Mar. 2012
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Page 5 of 7
AOT2606L/AOB2606L/AOTF2606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
100
50
TA=125°C
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
80
10000
60
1000
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Power De-rating for AOT2606L and
AOB2606L (Note F)
Power (W)
Current rating ID(A)
TA=25°C
40
17
5
2
10
100
20
10
0
1
0
25
0.001
0.1
10 0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
50
75
100
125
150
175
TCASE (°
°C)
Figure 14: Current De-rating for AOT2606L and
AOB2606L (Note F)
1E-05
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : Mar. 2012
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Page 6 of 7
AOT2606L/AOB2606L/AOTF2606L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1 : Mar. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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