Datasheet

AOT2608L/AOB2608L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2608L/AOB2608L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of RDS(ON), Ciss and
Coss.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
60V
72A
RDS(ON) (at VGS=10V)
< 8.0mΩ (< 7.6mΩ∗)
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
D
Bottom View
D
D
D
D
G
G
D
S
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
Units
V
±20
V
A
180
11
IDSM
TA=70°C
Maximum
60
54
IDM
TA=25°C
S
72
ID
TC=100°C
C
S
G
G
A
8.5
Avalanche Current C
IAS
50
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
125
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
2.1
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
50
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
100
PD
-55 to 175
Typ
12
48
1.2
°C
Max
15
60
1.5
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev 1 : Mar. 2012
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Page 1 of 6
AOT2608L/AOB2608L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
180
VGS=10V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
±100
nA
3.6
V
6.6
8
11.4
14
6.3
7.6
mΩ
1
V
72
A
A
mΩ
75
VGS=0V, VDS=30V, f=1MHz
S
2995
pF
270
pF
10.5
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
3.1
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
V
5
IGSS
TO220
VGS=10V, ID=20A
TO263
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
0.3
pF
0.6
0.9
38.5
55
Ω
nC
14
nC
3.5
nC
15
ns
10
ns
25
ns
tf
Turn-Off Fall Time
2.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
24
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
115
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Mar. 2012
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Page 2 of 6
AOT2608L/AOB2608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
6V
100
80
7V
80
60
ID(A)
ID (A)
5V
60
40
125°C
40
25°C
20
Vgs=4.5V
20
0
0
0
1
2
3
4
2
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
2.4
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
10
3
8
6
VGS=10V
2.2
VGS=10V
ID=20A
2
1.8
17
5
2
10
1.6
1.4
1.2
1
0.8
4
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
18
1.0E+02
ID=20A
1.0E+01
40
125°C
1.0E+00
12
IS (A)
RDS(ON) (mΩ
Ω)
15
125°C
1.0E-01
1.0E-02
9
1.0E-03
25°C
6
1.0E-04
25°C
1.0E-05
3
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : Mar. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOT2608L/AOB2608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
VDS=30V
ID=20A
3000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2500
2000
1500
Coss
1000
2
500
Crss
0
0
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
0
10µs
10µs
RDS(ON)
limited
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
400
Power (W)
ID (Amps)
60
500
1000.0
100.0
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
17
5
2
10
300
200
100
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.5°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : Mar. 2012
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Page 4 of 6
AOT2608L/AOB2608L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
100
80
60
40
20
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
80
TA=25°C
60
50
100
Power (W)
Current rating ID(A)
70
40
30
17
5
2
10
10
20
10
0
1
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0100
0.1
1
10
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
175
0.001
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : Mar. 2012
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Page 5 of 6
AOT2608L/AOB2608L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1 : Mar. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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