Datasheet

AOT260L/AOB260L
60V N-Channel MOSFET
General Description
Product Summary
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =6V)
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
60V
140A
< 2.5mW
< 2.9mW
Bottom View
Top View
Bottom View
D
D
D
D
D
D
S
G
AOT260L
S
D
G
G
S
G
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Avalanche Current
C
C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2.0 : November 2013
Steady-State
Steady-State
A
IAS, IAR
128
A
EAS, EAR
819
mJ
330
W
165
1.9
RqJA
RqJC
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
A
16
PDSM
TA=70°C
V
20
PD
TC=100°C
±20
500
IDSM
TA=70°C
Units
V
110
IDM
TA=25°C
Continuous Drain
Current
Maximum
60
140
ID
TC=100°C
S
S
AOB260L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
G
-55 to 175
Typ
12
54
0.35
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°C
Max
15
65
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250mA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250mA
2.2
VGS=10V, VDS=5V
500
V
TJ=55°C
5
mA
100
nA
2.7
3.2
V
2
2.5
3.1
3.9
VGS=6V, ID=20A
TO220
2.2
2.9
mW
VGS=10V, ID=20A
TO263
1.7
2.2
mW
1.9
68
2.5
mW
S
VGS=10V, ID=20A
TO220
Static Drain-Source On-Resistance
Units
1
Zero Gate Voltage Drain Current
RDS(ON)
Max
60
VDS=60V, VGS=0V
IDSS
ID(ON)
Typ
TJ=125°C
A
mW
gFS
Forward Transconductance
VGS=6V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
1
V
VSD
Diode Forward Voltage
IS=75A,VGS=0V
0.85
1.3
V
IS
Maximum Body-Diode Continuous CurrentG
140
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
Turn-Off Fall Time
VGS=10V, VDS=30V, ID=20A
9400 11800 14200
pF
1090
1360
1770
pF
32
40
68
pF
0.5
1
1.5
W
120
150
180
nC
28
40
52
nC
9
15
25
nC
VGS=10V, VDS=30V, RL=1.5W,
RGEN=3W
30
ns
27
ns
74
ns
12
IF=20A, dI/dt=500A/ms
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms
22
140
32
200
ns
42
260
ns
nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 : November 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
6V
80
80
4V
60
ID(A)
ID (A)
60
40
40
20
20
25°C
125°C
Vgs=3.5V
0
0
0
1
2
3
4
2
5
6
3.5
4
4.5
5
Normalized On-Resistance
2.2
4
VGS=6V
2
VGS=10V
2
VGS=10V
ID=20A
1.8
17
5
2
10
1.6
VGS=6V
ID=20A
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
25
50
75
100
125
150
175
200
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
ID=20A
1.0E+01
125°C
4
40
1.0E+00
3
IS (A)
RDS(ON) (mW)
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
RDS(ON) (mW)
2.5
125°C
1.0E-01
25°C
2
1.0E-02
1.0E-03
1
25°C
1.0E-04
0.0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0 : November 2013
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15000
12000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=30V
ID=20A
8
6
4
2
9000
6000
0
Crss
0
0
40
80
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
160
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
1000.0
10ms
10ms
RDS(ON)
10.0
1ms
10ms
DC
900
100ms
1.0
Power (W)
100.0
ID (Amps)
Coss
3000
TJ(Max)=175°C
0.1
800
TJ(Max)=175°C
TC=25°C
700
17
5
2
10
600
500
400
300
0.0
0.01
0.1
1
10
200
0.0001
100
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
ZqJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RqJC=0.45°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0 : November 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
300
200
100
TA=125°C
0
10
0
1
10
100
1000
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
150
175
1000
150
TA=25°C
Power (W)
120
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
90
60
100
17
5
2
10
10
30
0
0
25
50
75
100
125
150
175
1
0.001
ZqJA Normalized Transient
Thermal Resistance
10
1
0.1
10
0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJA=65°C/W
40
0.1
PD
0.01
Single Pulse
0.001
0.01
0.1
1
Ton
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0 : November 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.2.0 : November 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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