UNISONIC TECHNOLOGIES CO., LTD Preliminary URFP150 Power MOSFET 41A, 100V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC URFP150 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. TO-247 FEATURES * RDS(ON)<55mΩ @ VGS=10V,ID=25A * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free URFP150L-T47-T URFP150G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube 1 of 2 QW-R502-754.a URFP150 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V 41 A Continuous ID Continuous Drain Current A Pulsed IDM 160 Avalanche Current IAR 41 A Single Pulsed Avalanche Energy (Note 2) EAS 830 mJ Power Dissipation PD 192 W Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 740μH, IAS = 41A, VDD = 25V, RG = 25 Ω ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA Drain-Source Leakage Current IDSS VDS=80V Forward VGS=+20V Gate-Source Leakage Current IGSS Reverse VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=25A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, VGS=10V, Gate to Source Charge QGS ID=41A, IG=100µA, Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω, V Turn-OFF Delay Time tD(OFF) GS=0~10V Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=41A MIN TYP MAX UNIT 100 2 10 +100 -100 V µA nA nA 4 55 V mΩ 2800 1100 280 pF pF pF 140 29 68 nC nC nC ns ns ns ns 41 160 2.5 A A V 16 120 60 81 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R502-754.a