UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * Fast switching speed * RDS(ON)＜7mΩ @ VGS=10V SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT120N06L-TA3-T UTT120N06G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source UTT120N06L-TA3-T 1 G Pin Assignment 2 3 D S (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Packing Tube 1 of 3 QW-R502-756.a UTT120N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 60 V VGSS ±20 V Continuous ID 120 A Drain Current Pulsed IDM 480 A Avalanche Energy Single Pulsed EAS 875 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 62.5 1.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 60 VDS=VGS, ID=250µA VGS=10V, ID=50A VGS=4.5V, ID=40A 1 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDS=30V, ID=60A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, VGS=10V, ID≒60A, RG=0.4Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=120A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 10 µA +100 nA -100 nA 3 7 10 V mΩ mΩ 2990 585 340 pF pF pF 500 50 33 90 130 768 280 nC nC nC ns ns ns ns 120 480 1.5 A A V 2 of 3 QW-R502-756.a UTT120N06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-756.a