Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4350T
50 V; 3 A NPN low VCEsat
(BISS) transistor
Product data sheet
Supersedes data of 2002 Aug 08
2004 Jan 09
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat
(BISS) transistor
PBSS4350T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
50
V
IC
collector current (DC)
2
A
ICRP
repetitive peak collector
current
3
A
RCEsat
equivalent on-resistance
130
mΩ
APPLICATIONS
• Power management applications
PINNING
• Low and medium power DC/DC convertors
PIN
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
handbook, halfpage
3
3
1
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS4350T
1
ZC*
Top view
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4350T
2004 Jan 09
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
PBSS4350T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
2
A
ICRP
repetitive peak collector current
note 1
−
3
A
ICM
peak collector current
single peak
−
5
A
IB
base current (DC)
Ptot
total power dissipation
−
0.5
A
Tamb ≤ 25 °C; note 2
−
300
mW
Tamb ≤ 25 °C; note 3
−
480
mW
Tamb ≤ 25 °C; note 4
−
540
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
in free air; note 3
230
K/W
in free air; notes 1 and 4
104
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 09
3
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
PBSS4350T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
100
nA
IE = 0; VCB = 50 V; Tj = 150 °C
−
−
50
μA
nA
collector-base cut-off current IE = 0; VCB = 50 V
IEBO
emitter-base cut-off current
IC = 0; VEB = 5 V
−
−
100
hFE
DC current gain
IC = 100 mA; VCE = 2 V
300
−
−
IC = 500 mA; VCE = 2 V
300
−
−
IC = 1 A; VCE = 2 V; note 1
300
−
−
IC = 2 A; VCE = 2 V; note 1
200
−
−
IC = 3 A; VCE = 2 V; note 1
100
−
−
IC = 500 mA; IB = 50 mA
−
−
80
mV
IC = 1 A; IB = 50 mA
−
−
160
mV
IC = 2 A; IB = 100 mA; note 1
−
−
280
mV
IC = 2 A; IB = 200 mA; note 1
−
−
260
mV
IC = 3 A; IB = 300 mA; note 1
−
−
370
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
−
100
130
mΩ
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 100 mA; note 1
−
−
1.1
V
IC = 3 A; IB = 300 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on voltage
IC = 1 A; VCE = 2 V; note 1
1.2
−
−
V
fT
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
−
25
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 09
4
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
MLD867
1000
PBSS4350T
MLD868
1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
800
(1)
800
(1)
600
(2)
(2)
400
(3)
400
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD869
1300
10
102
Base-emitter voltage as a function of
collector current; typical values.
MLD870
1300
handbook, halfpage
103
104
IC (mA)
handbook, halfpage
VBEsat
VBEsat
(mV)
(mV)
(1)
900
(1)
900
(2)
(2)
(3)
(3)
500
500
100
10−1
1
10
102
100
10−1
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
1
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 09
5
10
102
103
104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
MLD871
103
handbook, halfpage
PBSS4350T
MLD872
103
handbook, halfpage
VCEsat
VCEsat
(mV)
(mV)
(1)
(2)
102
102
(3)
(1)
(2)
10
10
(3)
1
10−1
1
10
102
1
10−1
103
104
IC (mA)
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD873
104
handbook, halfpage
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD874
104
handbook, halfpage
VCEsat
(mV)
VCEsat
(mV)
103
103
102
102
(1)
(1)
(2)
(2)
(3)
(3)
10
10−1
1
10
102
10
10−1
103
104
IC (mA)
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
1
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 09
6
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
MLD875
103
handbook, halfpage
RCEsat
(Ω)
102
10
1
(1)
10−1
10−2 −1
10
(2)
1
10
102
(3)
103
104
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Jan 09
7
PBSS4350T
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
PBSS4350T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 09
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
8
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low VCEsat (BISS) transistor
PBSS4350T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 09
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Jan 09
Document order number: 9397 750 12437
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