Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D302
PBSS4350D
50 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2001 Jan 26
2001 Jul 13
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
50
V
ICM
peak collector current
5
A
RCEsat
equivalent on-resistance
<145
mΩ
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC convertor applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
1
collector
2
collector
3
base
4
emitter
5
collector
6
collector
DESCRIPTION
handbook, halfpage
6
5
4
NPN low VCEsat transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
1, 2, 5, 6
3
MARKING
4
1
TYPE NUMBER
PBSS4350D
MARKING CODE
Top view
3
MAM436
43
Fig.1
2001 Jul 13
2
2
Simplified outline (SOT457; SC-74) and
symbol.
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
3
A
ICM
peak collector current
−
5
A
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
600
mW
Tamb ≤ 25 °C; note 2
−
750
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
208
K/W
in free air; note 2
160
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
2001 Jul 13
3
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 50 V; IE = 0
−
−
100
nA
VCB = 50 V; IE = 0; Tj = 150 °C
−
−
50
μA
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
hFE
DC current gain
VCE = 2 V; IC = 500 mA
200
−
−
VCE = 2 V; IC = 1 A; note 1
200
−
−
VCE = 2 V; IC = 2 A; note 1
100
−
−
IC = 500 mA; IB = 50 mA
−
−
90
mV
IC = 1 A; IB = 50 mA
−
−
170
mV
IC = 2 A; IB = 200 mA; note 1
−
−
290
mV
VCEsat
collector -emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
−
110
<145
mΩ
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 200 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 1 A; note 1
−
−
1.1
V
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
30
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Jul 13
4
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
MGW175
600
MGW176
1.2
VBE
(V)
1.0
handbook, halfpage
handbook, halfpage
hFE
500
(1)
(1)
0.8
400
(2)
(2)
300
0.6
(3)
200
0.4
(3)
0.2
100
0
10 −1
1
10
102
0
10 −1
103
104
I C (mA)
1
10
102
103
104
I C (mA)
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 C.
(3) Tamb = 150 °C.
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3
Fig.2 DC current gain; typical values.
MGW181
103
handbook, halfpage
Base-emitter voltage as a function of
collector-current; typical values.
MGW178
1.2
VBEsat
(V)
1.0
handbook, halfpage
VCEsat
(mV)
(1)
102
0.8
(2)
(1)
0.6
(2)
(3)
(3)
0.4
10
0.2
1
10 −1
1
10
102
0
10 −1
103
104
I C (mA)
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation as a function of
collector current; typical values.
2001 Jul 13
5
10
102
103
104
I C (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
MGW180
MGW179
1200
5
handbook, halfpage
handbook,
halfpage
I
C
(mA)
1000
(2)
(3)
(4)
(5)
(1)
IC
(A)
(1)
(2)
4
(6)
(7)
(3)
(8)
(4)
800
(5)
3
(9)
(6)
600
(7)
(10)
2
(8)
400
(9)
(10)
200
1
(11)
(12)
0
0
0.4
0
0.8
1.2
VCE = 5 V.
(5) IB = 2.64 nA.
(6) IB = 2.31 nA.
(7) IB = 1.98 nA.
(8) IB = 1.65 nA.
(9) IB = 1.32 nA.
(10) IB = 0.99 nA.
(11) IB = 0.66 nA.
(12) IB = 0.33 nA.
(1) IB = 150 mA.
(2) IB = 135 mA.
(3) IB = 120 mA.
(4) IB = 105 mA.
Collector current as a function of
collector-emitter voltage; typical values.
Fig.7
MGW182
103
handbook, halfpage
RCEsat
(Ω)
102
10
1
(1)
10 −1
(2)
(3)
10 −2
10 −1
1
10
102
103
104
I C (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
Fig.8
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Jul 13
0.8
1.2
1.6
2
VCE (V)
VCE = 5 V.
(1) IB = 3.96 nA.
(2) IB = 3.63 nA.
(3) IB = 3.30 nA.
(4) IB = 2.97 mA.
Fig.6
0.4
0
1.6
2
VCE (V)
6
(5) IB = 90 mA.
(6) IB = 75 mA.
(7) IB = 60 mA.
(8) IB = 45 mA.
(9) IB = 30 mA.
(10) IB = 15 mA.
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2001 Jul 13
REFERENCES
IEC
JEDEC
EIAJ
SC-74
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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infringement and limitation of liability, unless explicitly
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Jul 13
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/03/pp9
Date of release: 2001 Jul 13
Document order number: 9397 750 08426
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