Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D087
PBSS4350Z
50 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2003 Jan 20
2003 May 13
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High collector current capability: IC and ICM
VCEO
collector-emitter voltage
50
V
ICM
peak collector current
5
A
RCEsat
equivalent on-resistance
<145
mΩ
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
PARAMETER
MAX.
UNIT
• Reduced PCB area requirements compared to DPAK.
PINNING
APPLICATIONS
PIN
• Power management
DESCRIPTION
1
base
– DC/DC converters
2
collector
– Supply line switching
3
emitter
– Battery charger
4
collector
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
4
handbook, halfpage
2, 4
– Inductive load driver, e.g. relays, buzzers, motors.
1
DESCRIPTION
NPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
3
1
Top view
2
3
MAM287
MARKING
TYPE NUMBER
PBSS4350Z
2003 May 13
MARKING CODE
Fig.1 Simplified outline (SOT223) and symbol.
PB4350
2
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
3
A
ICM
peak collector current
−
5
A
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; notes 1 and 3
−
1.35
W
Tamb ≤ 25 °C; notes 2 and 3
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air; notes 1 and 3
in free air; notes 2 and 3
VALUE
UNIT
92
K/W
62.5
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
2003 May 13
3
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 50 V; IE = 0
−
−
100
nA
VCB = 50 V; IE = 0; Tj = 150 °C
−
−
50
μA
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
hFE
DC current gain
VCE = 2 V; IC = 500 mA
200
−
−
VCE = 2 V; IC = 1 A; note 1
200
−
−
VCE = 2 V; IC = 2 A; note 1
100
−
−
IC = 500 mA; IB = 50 mA
−
−
90
mV
IC = 1 A; IB = 50 mA
−
−
170
mV
IC = 2 A; IB = 200 mA; note 1
−
−
290
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
−
110
<145
mΩ
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 200 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 1 A; note 1
−
−
1.1
V
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
30
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 May 13
4
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
MGW175
600
MGW176
1.2
VBE
(V)
1.0
handbook, halfpage
handbook, halfpage
hFE
500
(1)
(1)
0.8
400
(2)
(2)
300
0.6
(3)
200
0.4
(3)
0.2
100
0
10 −1
1
10
102
0
10 −1
103
104
I C (mA)
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MGW181
103
handbook, halfpage
10
102
103
104
I C (mA)
Base-emitter voltage as a function of
collector-current; typical values.
MGW178
1.2
VBEsat
(V)
1.0
handbook, halfpage
VCEsat
(mV)
(1)
102
0.8
(2)
(1)
0.6
(2)
(3)
(3)
0.4
10
0.2
1
10 −1
1
10
102
0
10 −1
103
104
I C (mA)
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation as a function of
collector current; typical values.
2003 May 13
5
10
102
103
104
I C (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
MGW180
MGW179
1200
5
handbook, halfpage
handbook,
halfpage
I
C
(mA)
1000
(2)
(3)
(4)
(5)
(1)
IC
(A)
(1)
(2)
4
(6)
(7)
(3)
(8)
(4)
800
(5)
3
(9)
(6)
600
(7)
(10)
2
(8)
400
(9)
(10)
200
1
(11)
(12)
0
0
0.4
0
0.8
1.2
VCE = 5 V.
(5) IB = 2.64 mA.
(6) IB = 2.31 mA.
(7) IB = 1.98 mA.
(8) IB = 1.65 mA.
(9) IB = 1.32 mA.
(10) IB = 0.99 mA.
(11) IB = 0.66 mA.
(12) IB = 0.33 mA.
(1) IB = 150 mA.
(2) IB = 135 mA.
(3) IB = 120 mA.
(4) IB = 105 mA.
Collector current as a function of
collector-emitter voltage; typical values.
Fig.7
MGW182
103
handbook, halfpage
RCEsat
(Ω)
102
10
1
(1)
10 −1
(2)
(3)
10 −2
10 −1
1
10
102
103
104
I C (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
Fig.8
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 May 13
0.8
1.2
1.6
2
VCE (V)
VCE = 5 V.
(1) IB = 3.96 mA.
(2) IB = 3.63 mA.
(3) IB = 3.30 mA.
(4) IB = 2.97 mA.
Fig.6
0.4
0
1.6
2
VCE (V)
6
(5) IB = 90 mA.
(6) IB = 75 mA.
(7) IB = 60 mA.
(8) IB = 45 mA.
(9) IB = 30 mA.
(10) IB = 15 mA.
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
2003 May 13
REFERENCES
IEC
JEDEC
EIAJ
SC-73
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350Z
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
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not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
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other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 May 13
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/03/pp9
Date of release: 2003 May 13
Document order number: 9397 750 11057
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