UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) <1.2Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N70ZL-TF1-T 10N70ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B20.a 10N70Z-Q Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 10 A Continuous ID 10 A Drain Current Pulsed (Note 2) IDM 40 A Single Pulsed (Note 3) EAS 250 mJ Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation 50 W PD Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 5mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62.5 2.5 UNIT °C/W °C/W 2 of 6 QW-R502-B20.a 10N70Z-Q Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 700 V Drain-Source Leakage Current IDSS VDS = 700V, VGS = 0V 10 µA Forward VGS = 20 V, VDS = 0 V 5 µA Gate-Source Leakage Current IGSS Reverse VGS = -20 V, VDS = 0 V -5 µA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A 1.0 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 890 1290 pF VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS 120 160 pF Reverse Transfer Capacitance CRSS 14 22 pF SWITCHING CHARACTERISTICS 54 70 ns Turn-On Delay Time tD(ON) Turn-On Rise Time tR 69 150 ns VDS=30V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 290 340 ns tF 95 145 ns 39 57 nC Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10 V Gate-Source Charge QGS 7.9 nC (Note 1, 2) Gate-Drain Charge QGD 9.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode IS 10 A Forward Current Maximum Pulsed Drain-Source Diode ISM 40 A Forward Current Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-B20.a 10N70Z-Q Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-B20.a 10N70Z-Q Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-B20.a 10N70Z-Q Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-B20.a