Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N65K-MT
Power MOSFET
10A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N65K-MT is an N-channel Power MOSFET
using UTC’s advanced technology to provide customers a
minimum on-state resistance and superior switching
performance, etc.
The UTC 10N65K-MT is generally applied in high
efficient DC to DC converters, PWM motor controls and
bridge circuits, etc.

FEATURES
* RDS(ON) < 1.0Ω @ VGS=10V, ID = 5.0A
* High Switching Speed
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N65KL-TA3-T
10N65KG-TA3-T
TO-220
10N65KL-TF3-T
10N65KG-TF3-T
TO-220F
10N65KL-TF1-T
10N65KG-TF1-T
TO-220F1
10N65KL-TF2-T
10N65KG-TF2-T
TO-220F2
10N65KL-TF3T-T
10N65KG-TF3T-T
TO-220F3
10N65KL-T2Q-T
10N65KG-T2Q-T
TO-262
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
1 of 7
QW-R502-B24.E
10N65K-MT

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-B24.E
10N65K-MT

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
38
A
Pulsed (Note 2)
IDM
Avalanche Energy
Single Pulsed (Note 3)
EAS
400
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.7
V/ns
TO-220/TO-262
156
W
TO-220F/TO-220F1
Power Dissipation
PD
50
W
TO-220F3
TO-220F2
48
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=8mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
SYMBOL
θJA
RATING
62.5
0.8
UNIT
°C/W
°C/W
θJC
2.5
°C/W
2.6
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-B24.E
10N65K-MT

Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
IG=100μA (Note1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω,
Turn-On Rise Time
tR
V
Turn-Off Delay Time
tD(OFF)
GS=0V (Note1, 2)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
Reverse Recovery Time
trr
VGS=0V, IS=10A,
dIF/dt=100A/µs (Note1)
Reverse Recovery Charge
Qrr
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
650
2.0
1
100
-100
V
µA
nA
nA
4.0
1.0
V
Ω
750 1500 pF
130 180 pF
9
20
pF
30
9
8
65
80
200
90
510
4.7
50
80
150
260
150
nC
nC
nC
ns
ns
ns
ns
10
A
38
A
1.4
V
ns
µC
4 of 7
QW-R502-B24.E
10N65K-MT

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-B24.E
10N65K-MT

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
6 of 7
QW-R502-B24.E
10N65K-MT
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Continuous Drain-Source Diode
Forward Current, IS (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-B24.E
Similar pages