UNISONIC TECHNOLOGIES CO., LTD 12N50K-MT Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N50K-MT is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON) < 0.52 Ω @ VGS = 10 V, ID = 6 A * High Switching Speed * 100% Avalanche Tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N50KL-TA3-T 12N50KG-TA3-T 12N50KL-TF1-T 12N50KG-TF1-T 12N50KL-TF2-T 12N50KG-TF2-T 12N50KL-TF3-T 12N50KG-TF3-T 12N50KL-TM3-T 12N50KG-TM3-T 12N50KL-TN3-R 12N50KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 8 QW-R502-B26.E 12N50K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-B26.E 12N50K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 12 (Note 2) A Drain Current 48 (Note 2) A Pulsed (Note 3) IDM Avalanche Current (Note 3) IAR 12 A Avalanche Energy Single Pulsed (Note 4) EAS 600 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 3.5 V/ns TO-220 200 W TO-220F 50 W Power Dissipation TO-220F1/TO-220F2 54 W TO-251/TO-252 45 W PD TO-220 1.6 W/°C TO-220F 0.4 W/°C Derate above 25°C TO-220F1/TO-220F2 0.43 W/°C TO-251/TO-252 0.36 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L =8.33mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F Junction to Case TO-220F1/TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °С/W 110 0.625 2.5 2.31 2.77 °С/W °С/W °С/W °С/W °С/W 3 of 8 QW-R502-B26.E 12N50K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V Reverse Recovery Time trr IS=12A, VGS=0V di/dt=100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 10 +100 -100 V µA nA nA 4.0 0.52 V Ω 850 1500 160 210 10 22 pF pF pF 36 10 10 75 125 190 125 nC nC nC ns ns ns ns 2.0 0.39 45 90 150 210 150 12 48 1.5 400 4.3 A A V ns μC 4 of 8 QW-R502-B26.E 12N50K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 8 QW-R502-B26.E 12N50K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-B26.E 12N50K-MT TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 120 0 240 360 480 600 0 0 720 0.6 1.2 Body-Diode Continuous Current, IS (A) 7.5 Drain Current, ID (A) 3.0 4.2 3.6 Body-Diode Continuous Current vs. Source to Drain Voltage Drain-Source On-State Resistance Characteristics 6 VGS=10V, ID=6A 4.5 3 1.5 0 0.5 1 1.5 2 2.5 Drain to Source Voltage, VDS (V) 2.4 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) 0 1.8 3 14 12 9 6 3 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) Drain Current, ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-B26.E 12N50K-MT Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-B26.E