Datasheet

UNISONIC TECHNOLOGIES CO., LTD
QS8M11
Preliminary
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
„
The UTC QS8M11 uses UTC’s advanced technology to provide
the customers with low voltage drive, etc.
The UTC QS8M11 is suitable for switching.
SOP-8
FEATURES
„
* N-Channel: 30V, 3.5A
RDS(ON) < 50mΩ @ VGS =10V
RDS(ON) < 65mΩ @ VGS= 4.5V
RDS(ON) < 70mΩ @ VGS= 4.0V
* P-Channel: -30V, -3.0A
RDS(ON) < 75mΩ @ VGS= -10V
RDS(ON) < 115mΩ @ VGS= -4.5V
RDS(ON) < 125mΩ @ VGS= -4.0V
* Low voltage drive (4V drive)
* Low on-resistance
SYMBOL
„
(5)(6)
D2
(7)(8)
D1
(4)
G2
(2)
G1
S1
N-Channel (1)
„
S2
P-Channel (3)
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
QS8M11L-S08-T
QS8M11G-S08-T
SOP-8
QS8M11L-S08-R
QS8M11G-S08-R
SOP-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Pin Assignment
Packing
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
Tube
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
1 of 6
QW-R502-B29.a
QS8M11
„
Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-B29.a
QS8M11
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
N-Channel
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
TC=25°C
TC=25°C
SYMBOL
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RATINGS
30
±20
3.5
12
2
+150
-55 ~ +150
UNIT
V
V
A
A
W
°C
°C
P-Channel
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
-3.0
A
Pulsed Drain Current
TC=25°C
IDM
-12
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW ≤ 10μs, Duty cycle ≤ 1%, Mounted on a ceramic board.
„
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note2)
Gate-Source Charge
Gate-Drain Charge
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (Note 2)
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
SYMBOL
MIN
BVDSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=10V, ID=1mA
VGS=10V, ID=3.5A
VGS=4.5V, ID=3.5A
VGS=4.0V, ID=3.5A
1.0
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VSD
VGS=0V, VDS=10V,
f=1.0MHz
VDD≈15V, VGS=10V,
ID=1.7A, RG=10Ω,
RL=8.8Ω
VGS=5V, VDD≈15V,
ID=3.5A
IS=3.5A, VGS=0V
TYP MAX UNIT
35
45
50
1
±10
V
µA
uA
2.5
50
65
70
V
mΩ
mΩ
mΩ
180
70
35
pF
pF
pF
10
25
25
7
3.5
1
1
ns
ns
ns
ns
nC
nC
nC
1.2
V
IS
1.0
A
ISM
12
A
3 of 6
QW-R502-B29.a
QS8M11
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=-1mA, VGS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±20V
-30
VGS(TH)
VDS=-10V, ID=-1mA
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-1.5A
VGS=-4.0V, ID=-1.5A
-1.0
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-10V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDD≈-15V, VGS=-10V,
Turn-ON Rise Time
tR
ID=-1.5A, RG=10Ω,
Turn-OFF Delay Time
tD(OFF)
RL=10Ω
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VGS=-5V, VDD≈-15V,
Gate-Source Charge
QGS
ID=-3A
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-3A, VGS=0V
Continuous Drain-Source Diode Forward Current
IS
Pulsed Drain-Source Diode Forward Current
ISM
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface Mounted on 1in 2 pad area, t ≤ 10 sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
55
85
95
-1
±10
V
µA
µA
-2.5
75
115
125
V
mΩ
mΩ
mΩ
480
70
70
pF
pF
pF
7
18
50
35
5.2
1.6
1.6
ns
ns
ns
ns
nC
nC
nC
-1.2
-1.0
-12
V
A
A
4 of 6
QW-R502-B29.a
QS8M11
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
N-CHANNEL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
VER.a
QS8M11
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
P-CHANNEL
VGS
Same Type
as DUT
12V
QG
-10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
VER.a
Similar pages
2919