UNISONIC TECHNOLOGIES CO., LTD
15N40K-MT
Power MOSFET
15A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 15N40K-MT is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 15N40K-MT is generally applied in high efficiency
switch mode power supplies.
FEATURES
* RDS(ON) < 0.30Ω @ VGS = 10 V, ID = 7.5 A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N40KL-TF1-T
15N40KG-TF1-T
15N40KL-TF2-T
15N40KG-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F1
TO-220F2
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tube
15N40KL-TF2-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TF1: TO-220F1, TF2: TO-220F2
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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15N40K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous
TC=25°C
ID
15
A
Drain Current
60
A
Pulsed (Note 2)
IDM
Avalanche Current (Note 2)
IAR
15
A
Avalanche Energy Single Pulsed (Note 3)
EAS
586
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
15
V/ns
TO-220F1
170
W
Power Dissipation (TC=25°C)
TO-220F2
52
W
PD
TO-220F1
1.45
W/°C
Derate above 25°C
0.416
W/°C
TO-220F2
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=5.21mH, IAS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
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θJC
RATINGS
62.5
0.7
2.4
UNIT
°C/W
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
ID=250µA, VGS=0V, TJ=25°C
MIN TYP MAX UNIT
400
∆BVDSS/∆TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
Gate- Source Leakage Current
TEST CONDITIONS
IDSS
Forward
Reverse
IGSS
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0.5
VDS=400V, VGS=0V,
VDS=320V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDS=30V, ID=0.5A, RG=25Ω
Rise Time
tR
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain ("Miller") Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=15A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs; Duty Cycle ≤ 2%.
2. Essentially Independent of Operating Temperature Typical Characteristics.
UNISONIC TECHNOLOGIES CO., LTD
V
2.0
V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0
0.23 0.30
V
Ω
865
200
10.9
pF
pF
pF
72
108
226
124
38.6
10.2
9.6
ns
ns
ns
ns
nC
nC
nC
15
60
1.4
A
A
V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
RL
QG
10V
QGS
VGS
QGD
VDS
DUT
1mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
200
150
100
50
150
100
50
0
0
0
0
120
360
480 600
240
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
12
18
10
15
VGS=10V, ID=7.5A
8
6
4
2
Body-Diode Continuous
Current, IS (A)
Drain Current, ID (A)
200
0.6
2.4
1.2 1.8
3.0 3.8
Gate Threshold Voltage, VTH (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
12
9
6
3
0
0
0.4
0.8 1.2
1.6 2.0 2.4
Drain to Source Voltage, VDS (V)
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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