Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF6N15Z
Power MOSFET
6A, 150V N-CHANNEL
POWER MOSFET

DESCRIPTION
1
The UTC UF6N15Z is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers with a
minimum on-state resistance, low gate charge and superior switching
performance.

SOT-223
FEATURES
* R DS(ON) <1.95Ω @ V GS =10V, I D =6A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF6N15ZL-AA3-R
UF6N15ZG-AA3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
UF6N15L-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
G
D
S
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AA3: SOT-223
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Packing
Tape Reel
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QW-R502-759.B
UF6N15Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
V DSS
150
V
V GSS
±20
V
Continuous
ID
6
A
Continuous Drain Current
Pulsed
I DM
24
A
Avalanche Energy
E AS
52
mJ
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
T STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
I D =250µA, V GS =0V
Drain-Source Leakage Current
I DSS
V DS =150V
Forward
V GS =+20V, V DS =0V
Gate-Source Leakage Current
I GSS
Reverse
V GS =-20V, V DS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(TH)
I D =250µA
Static Drain-Source On-State Resistance
R DS(ON)
V GS =10V, I D =6A
DYNAMIC PARAMETERS
Input Capacitance
C ISS
Output Capacitance
C OSS
V GS =0V, V DS =25V, f=1MHz
Reverse Transfer Capacitance
C RSS
SWITCHING PARAMETERS
Total Gate Charge
QG
V DD =50V, I D =6A, I G =100µA,
Gate to Source Charge
Q GS
V GS =10V
Gate to Drain Charge
Q GD
Turn-ON Delay Time
t D(ON)
Rise Time
tR
V DD =30V, I D =1A, R G =25Ω,
V GS =10V
Turn-OFF Delay Time
t D(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
I SM
Drain-Source Diode Forward Voltage
V SD
I S =6A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
150
2
190
70
20
1
10
-10
V
µA
µA
µA
4
1.95
V
Ω
300
100
50
pF
pF
pF
3.2
0.64
1.6
6
38
11
13
nC
nC
nC
ns
ns
ns
ns
6
24
1.48
A
A
V
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Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
200
150
100
200
150
100
50
50
0
0
40
80
120
160
0
0
200
2.1
2.8
3.5
4.2
Drain Current vs. Source to Drain Voltage
0.6
1.2
0.5
1.0
Drain Current, ID (A)
Drain Current, ID (A)
Drain-Source On-State Resistance
Characteristics
VGS=10V, ID=0.425A
0.3
0.2
0.8
0.6
0.4
0.2
0.1
0
1.4
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
0.4
0.7
0
0.05 0.1 0.15 0.2
0.25
Drain to Source Voltage, VDS (V)
0.3
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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