Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF3N25Z
Power MOSFET
3A, 250V N-CHANNEL
POWER MOSFET
1

DESCRIPTION
SOT-223
The UTC UF3N25Z is an N-channel enhancement mode
Power MOSFET using UTC’ s advanced technology to provide
customers with a minimum on-state resistance, low gate charge
and superior switching performance.


TO-252
FEATURES
* RDS(ON)<2Ω @ VGS=10V
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested

1
1
TO-251
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UF3N25ZL-AA3-R
UF3N25ZG-AA3-R
SOT-223
UF3N25ZL-TM3-T
UF3N25ZG-TM3-T
TO-251
UF3N25ZL-TN3-R
UF3N25ZG-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
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QW-R502-760.E
UF3N25Z

Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
SOT-223
TO-251
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF3N25Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
3
A
Continuous
ID
Continuous Drain Current
Pulsed
IDM
12
A
Avalanche Energy
EAS
52
mJ
SOT-223
0.8
W
Power Dissipation
PD
TO-251/TO-252
1.14
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=250V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=50V, ID=1.3A, IG=100µA,
Gate to Source Charge
QGS
VGS=10V
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=0~10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=3A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
250
2
1
10
-10
V
µA
µA
µA
4
2
V
Ω
190
80
30
pF
pF
pF
3.2 5.5
0.64
1.6
30
35
118 125
50
58
90 110
nC
nC
nC
ns
ns
ns
ns
3
12
1.3
A
A
V
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
VDS=VGS
250
250
200
200
150
150
100
100
50
50
0
0
60
120
180
240
0
0
300
Drain-Source On-State Resistance
Characteristics
2.1
2.8
3.5
4.2
Drain Current vs. Source to Drain Voltage
1.2
VGS=10V
1.0
0.5
Drain Current, ID (A)
Drain Current, ID (A)
1.4
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
0.6
0.7
0.4
0.3
0.2
0.8
0.6
0.4
0.2
0.1
0
0
0.1
0.2 0.3
0.4
0.5
Drain to Source Voltage, VDS (V)
0.6
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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