Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF2N30Z
Power MOSFET
2A, 300V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF2N30Z is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers with a
minimum on-state resistance, low gate charge and superior switching
performance.

FEATURES
* RDS(ON) < 2.5Ω @ VGS=10V, ID=1A
* High switching speed
* Typically 4nC low gate charge
* 100% avalanche tested


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF2N30ZG-AA3-R
UF2N30ZL-TM3-T
UF2N30ZG-TM3-T
UF2N30ZL-TMS-T
UF2N30ZG-TMS-T
UF2N30ZL-TN3-T
UF2N30ZG-TN3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
SOT-223
TO-251
TO-251S
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tube
Tube
MARKING
SOT-223
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
TO-251 / TO-251S / TO-252
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QW-R502-761.F
UF2N30Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous
Pulsed
Avalanche Energy
Power Dissipation (TC=25°C)
SYMBOL
VDSS
VGSS
ID
IDM
EAS
SOT-223
TO-251/TO-251S
TO-252
PD
RATINGS
300
±20
2
8
52
0.8
UNIT
V
V
A
A
mJ
W
1.13
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=300V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=50V, ID=1.3A,
Gate to Source Charge
QGS
IG=100µA, VGS=10V
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A,
RG=25Ω, VGS=0~10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=2A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
300
2
1
10
-10
V
µA
µA
µA
4
2.5
V
Ω
200
90
30
4
0.64
1.6
29
110
50
99
pF
pF
pF
6
35
125
56
120
nC
nC
nC
ns
ns
ns
ns
2
8
1.3
A
A
V
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UF2N30Z

Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
200
150
100
50
0
200
150
100
50
0
70
140
210
280
0
0
350
1.4
2.1
2.8
3.5
4.2
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
Drain Current, ID (A)
Drain Current, ID (A)
0.7
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-761.E
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